Mn doping as a simple strategy for improving energy storage in BaBi4Ti4O15 thin films
文献类型：期刊论文
| 作者 | Gong, C. Z.3,4; Yang, B. B.4; Wei, R. H.4; Liu, M.3,4; Zhang, R. R.2; Tong, H. Y.4,5; Hu, L.4 ; Zhu, X. B.4; Sun, Y. P.1,2,4
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| 刊名 | APPLIED PHYSICS LETTERS
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| 出版日期 | 2024-07-08 |
| 卷号 | 125 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/5.0217696 |
| 通讯作者 | Yang, B. B.(bbyang@issp.ac.cn) ; Zhu, X. B.(xbzhu@issp.ac.cn) |
| 英文摘要 | To obtain high energy storage density in ferroelectric films, polarization and breakdown field E-b are two crucial factors. The inversely coupled relationship between polarization and E-b is commonly observed and it remains a challenge to realize high E-b without deteriorating polarization. Selecting a suitable element doping should largely enhance the E-b since of the optimization of microstructures as well as the decrease in defects, meanwhile the doping should induce extra polarization contribution from lattice distortion. In this work, we reported that E-b can be largely enhanced via Mn doping in BaBi4Ti4O15 thin films due to grain refining, densification, and oxygen vacancy reduction. Interestingly, the polarization is not deteriorated since of the Mn doping effect induced extra polarization from the lattice distortion. Consequently, an ultrahigh energy storage density of 96 J/cm(3) with a high efficiency of 76.6% was achieved in BaBi4Ti3.95Mn0.05O15 thin films with excellent stability and reliability. This work will provide a simple and effective route to improve the energy storage in dielectric capacitors. |
| WOS关键词 | DIELECTRIC-PROPERTIES ; DENSITY ; FERROELECTRICITY ; PERFORMANCE ; CAPACITORS ; POLYMER ; FAMILY |
| 资助项目 | the Hundred-Talent Program of Chinese Academy of Science[2023000641] ; Hundred Talents Program of the Chinese Academy of Sciences[12274410] ; National Natural Science Foundation of China[2022a05020037] ; Anhui Provincial Key RD Program[2023AH051324] ; Education Department of Anhui Province |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:001270380700005 |
| 出版者 | AIP Publishing |
| 资助机构 | the Hundred-Talent Program of Chinese Academy of Science ; Hundred Talents Program of the Chinese Academy of Sciences ; National Natural Science Foundation of China ; Anhui Provincial Key RD Program ; Education Department of Anhui Province |
| 源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/137083]  |
| 专题 | 中国科学院合肥物质科学研究院 |
| 通讯作者 | Yang, B. B.; Zhu, X. B. |
| 作者单位 | 1.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China 2.Chinese Acad Sci, High Magnet Field Lab, HFIPS, Hefei 230031, Peoples R China 3.Univ Sci & Technol China, Hefei 230026, Peoples R China 4.Chinese Acad Sci, Key Lab Mat Phys, Inst Solid State Phys, HFIPS, Hefei 230031, Peoples R China 5.Hefei Normal Univ, Sch Phys & Mat Engn, Hefei 230061, Peoples R China |
| 推荐引用方式 GB/T 7714 | Gong, C. Z.,Yang, B. B.,Wei, R. H.,et al. Mn doping as a simple strategy for improving energy storage in BaBi4Ti4O15 thin films[J]. APPLIED PHYSICS LETTERS,2024,125. |
| APA | Gong, C. Z..,Yang, B. B..,Wei, R. H..,Liu, M..,Zhang, R. R..,...&Sun, Y. P..(2024).Mn doping as a simple strategy for improving energy storage in BaBi4Ti4O15 thin films.APPLIED PHYSICS LETTERS,125. |
| MLA | Gong, C. Z.,et al."Mn doping as a simple strategy for improving energy storage in BaBi4Ti4O15 thin films".APPLIED PHYSICS LETTERS 125(2024). |
入库方式： OAI收割
来源：合肥物质科学研究院
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