Tunable 5d-t2g Mott State and Monoatomic Layer Two-Dimensional Electron Gas Realized in Spin-Orbit-Coupled SrIrO3 through Heterostructuring
文献类型:期刊论文
作者 | Li, Miao1,2; Ding, Zhenyu1,2; Li, Liangyu1,2; Liu, Yuqiang1,2; Yang, Shuo-Wang3; Wu, Gang3; Yang, Xiaoping1 |
刊名 | ACS APPLIED ELECTRONIC MATERIALS
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出版日期 | 2024-07-16 |
关键词 | iridates oxide heterostructures Mott insulator-metaltransition monatomic layer two-dimensional electron gas spin-orbit coupling first-principles calculations |
DOI | 10.1021/acsaelm.4c01015 |
通讯作者 | Wu, Gang(wug@ihpc.a-star.edu.sg) ; Yang, Xiaoping(xpyang@hmfl.ac.cn) |
英文摘要 | We employ density functional theory in combination with a correlation U correction to elucidate a complete charge transfer phenomenon between the interfacial Ti-t(2g) orbitals and Ir-t(2g) orbitals within spin-orbit-coupled (SrIrO3)(m)/(LaTiO3)(1) superlattices. This charge transfer is driven by the interfacial polarity difference and oxygen octahedral distortion. Our investigation shows that hole doping of the LaTiO3 layer or increasing the number m of SrIrO3 layers offers an effective means to modulate the charge transfer and the electron occupation within the J(eff) = 1/2 5d-bands of Ir atoms. This modulation leads to the emergence of various electronic states, including nonmagnetic band insulating (SrIrO3)(1)/(LaTiO3)(1), ferromagnetic metallic (SrIrO3)(1)/(La1-xBaxTiO3)(1), ferrimagnetic Mott insulating (SrIrO3)(2)/(LaTiO3)(1), and ferrimagnetic metallic (SrIrO3)(m)/(LaTiO3)(1) with m >= 3. Notably, we find that charge transfer and the two-dimensional electron gas phenomenon occur exclusively at the interfacial IrO2 monatomic layers of (SrIrO3)(m)/(LaTiO3)(1), regardless of the thickness of the SrIrO3 layer. This behavior sharply contrasts with the characteristics of the LaAlO3/SrTiO3 system, where the 2DEG extends across multiple unit cells. Our research provides fresh insights into the unconventional 5d electronic structures of spin-orbit-coupled iridates, particularly those with less-explored fractionally occupied mixed valence state (Ir3.3+/Ir3.7+), suggesting their potential for application in nanoscale oxide electronic devices. |
WOS关键词 | INITIO MOLECULAR-DYNAMICS ; PHYSICS |
资助项目 | National Key Research and Development Program of China[2021YFA1600204] ; National Key Research and Development Program of China[2018YFA0305700] ; National Natural Science Foundation of China (NSFC)[12174397] ; High Magnetic Field Laboratory of Anhui Province[AHHM-FX-2021-03] ; MTC Programmatic fund[M24M8b0004] |
WOS研究方向 | Engineering ; Materials Science |
语种 | 英语 |
WOS记录号 | WOS:001270099000001 |
出版者 | AMER CHEMICAL SOC |
资助机构 | National Key Research and Development Program of China ; National Natural Science Foundation of China (NSFC) ; High Magnetic Field Laboratory of Anhui Province ; MTC Programmatic fund |
源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/137110] ![]() |
专题 | 中国科学院合肥物质科学研究院 |
通讯作者 | Wu, Gang; Yang, Xiaoping |
作者单位 | 1.Chinese Acad Sci, High Magnet Field Lab Anhui Prov, High Magnet Field Lab, HFIPS, Hefei 230031, Peoples R China 2.Univ Sci & Technol China, Sci Isl Branch, Grad Sch, Hefei 230026, Peoples R China 3.ASTAR, Inst High Performance Comp IHPC, Mat Sci & Chem, Singapore 138632, Singapore |
推荐引用方式 GB/T 7714 | Li, Miao,Ding, Zhenyu,Li, Liangyu,et al. Tunable 5d-t2g Mott State and Monoatomic Layer Two-Dimensional Electron Gas Realized in Spin-Orbit-Coupled SrIrO3 through Heterostructuring[J]. ACS APPLIED ELECTRONIC MATERIALS,2024. |
APA | Li, Miao.,Ding, Zhenyu.,Li, Liangyu.,Liu, Yuqiang.,Yang, Shuo-Wang.,...&Yang, Xiaoping.(2024).Tunable 5d-t2g Mott State and Monoatomic Layer Two-Dimensional Electron Gas Realized in Spin-Orbit-Coupled SrIrO3 through Heterostructuring.ACS APPLIED ELECTRONIC MATERIALS. |
MLA | Li, Miao,et al."Tunable 5d-t2g Mott State and Monoatomic Layer Two-Dimensional Electron Gas Realized in Spin-Orbit-Coupled SrIrO3 through Heterostructuring".ACS APPLIED ELECTRONIC MATERIALS (2024). |
入库方式: OAI收割
来源:合肥物质科学研究院
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