中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Key electronic parameters of 2H-stacking bilayer MoS2 on sapphire substrate determined by terahertz magneto-optical measurement in Faraday geometry

文献类型:期刊论文

作者Cheng, Xingjia1,5; Xu, Wen1,2,3; Wen, Hua1,5; Zhang, Jing1,5; Zhang, Heng1,5; Li, Haowen3; Peeters, Francois M.3,4
刊名FRONTIERS OF PHYSICS
出版日期2024-12-01
卷号19
关键词bilayer MoS2 terahertz time-domain spectroscopy magneto-optical conductivities key electronic parameters effective electron mass
ISSN号2095-0462
DOI10.1007/s11467-024-1425-4
通讯作者Xu, Wen(wenxu_issp@aliyun.com)
英文摘要Bilayer (BL) transition metal dichalcogenides (TMDs) are important materials in valleytronics and twistronics. Here we study terahertz (THz) magneto-optical (MO) properties of n-type 2H-stacking BL molybdenum sulfide (MoS2) on sapphire substrate grown by chemical vapor deposition. The AFM, Raman spectroscopy and photoluminescence are used for characterization of the samples. Applying THz time-domain spectroscopy (TDS), in combination with polarization test and the presence of magnetic field in Faraday geometry, THz MO transmissions through the sample are measured from 0 to 8 T at 80 K. The complex right- and left-handed circular MO conductivities for 2H-stacking BL MoS2 are obtained. Through fitting the experimental results with theoretical formula of MO conductivities for an electron gas, generalized by us previously through the inclusion of photon-induced electronic backscattering effect, we are able to determine magneto-optically the key electronic parameters of BL MoS2, such as the electron density n(e), the electronic relaxation time tau, the electronic localization factor c and, particularly, the effective electron mass m* around Q-point in between the K- and Gamma-point in the electronic band structure. The dependence of these parameters upon magnetic field is examined and analyzed. This is a pioneering experimental work to measure m* around the Q-point in 2H-stacking BL MoS2 and the experimental value is very close to that obtained theoretically. We find that n(e)/tau/ divided by c divided by /m* in 2H-stacking BL MoS2 decreases/increases/decreases/increases with increasing magnetic field. The results obtained from this study can be benefit to us in gaining an in-depth understanding of the electronic and optoelectronic properties of BL TMD systems.
WOS关键词MOLYBDENUM-DISULFIDE ; GRAPHENE ; POLARONS ; MASS
资助项目National Natural Science Foundation of China (NSFC)[U2230122] ; National Natural Science Foundation of China (NSFC)[U2067207] ; Shenzhen Science and Technology Program[KQTD20190929173954826]
WOS研究方向Physics
语种英语
WOS记录号WOS:001271926900002
出版者HIGHER EDUCATION PRESS
资助机构National Natural Science Foundation of China (NSFC) ; Shenzhen Science and Technology Program
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/137169]  
专题中国科学院合肥物质科学研究院
通讯作者Xu, Wen
作者单位1.Chinese Acad Sci, Key Lab Mat Phys, Inst Solid State Phys, HFIPS, Hefei 230031, Peoples R China
2.Yunnan Univ, Sch Phys & Astron, Key Lab Quantum Informat Yunnan Prov, Kunming 650091, Yunnan, Peoples R China
3.Micro Opt Instruments Inc, Shenzhen 518118, Peoples R China
4.Univ Antwerp, Dept Phys, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
5.Univ Sci & Technol China, Hefei 230026, Peoples R China
推荐引用方式
GB/T 7714
Cheng, Xingjia,Xu, Wen,Wen, Hua,et al. Key electronic parameters of 2H-stacking bilayer MoS2 on sapphire substrate determined by terahertz magneto-optical measurement in Faraday geometry[J]. FRONTIERS OF PHYSICS,2024,19.
APA Cheng, Xingjia.,Xu, Wen.,Wen, Hua.,Zhang, Jing.,Zhang, Heng.,...&Peeters, Francois M..(2024).Key electronic parameters of 2H-stacking bilayer MoS2 on sapphire substrate determined by terahertz magneto-optical measurement in Faraday geometry.FRONTIERS OF PHYSICS,19.
MLA Cheng, Xingjia,et al."Key electronic parameters of 2H-stacking bilayer MoS2 on sapphire substrate determined by terahertz magneto-optical measurement in Faraday geometry".FRONTIERS OF PHYSICS 19(2024).

入库方式: OAI收割

来源:合肥物质科学研究院

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。