中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
The Evaluation of Interface Quality in HfO2 Films Probed by Time-Dependent Second-Harmonic Generation

文献类型:期刊论文

作者Zhang, Libo1,2; Ye, Li1,2; Zhao, Weiwei5,6; Huang, Chongji5,6; Liu, Xue2; Gao, Wenshuai2; Li, Tao4; Min, Tai4; Yang, Jinbo3; Tian, Mingliang7,9
刊名MATERIALS
出版日期2024-07-01
卷号17
关键词time-dependent second-harmonic generation HfO2 film fixed charge density interface state density capacitance-voltage/conductance-voltage
DOI10.3390/ma17143471
通讯作者Chen, Xuegang(xgchen@ahu.edu.cn)
英文摘要Time-dependent second-harmonic generation (TD-SHG) is an emerging sensitive and fast method to qualitatively evaluate the interface quality of the oxide/Si heterostructures, which is closely related to the interfacial electric field. Here, the TD-SHG is used to explore the interface quality of atomic layer deposited HfO2 films on Si substrates. The critical SHG parameters, such as the initial SHG signal and characteristic time constant, are compared with the fixed charge density (Qox) and the interface state density (D-it) extracted from the conventional electrical characterization method. It reveals that the initial SHG signal linearly decreases with the increase in Qox, while D-it is linearly correlated to the characteristic time constant. It verifies that the TD-SHG is a sensitive and fast method, as well as simple and noncontact, for evaluating the interface quality of oxide/Si heterostructures, which may facilitate the in-line semiconductor test.
WOS关键词MOS CAPACITORS
资助项目National Natural Science Foundation of China[12104005] ; Scientific Research Foundation of the Higher Education Institutions for Distinguished Young Scholars in Anhui Province[2022AH020012] ; Innovation Project for Overseas Researcher in Anhui Province[2022LCX004]
WOS研究方向Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering ; Physics
语种英语
WOS记录号WOS:001278489500001
出版者MDPI
资助机构National Natural Science Foundation of China ; Scientific Research Foundation of the Higher Education Institutions for Distinguished Young Scholars in Anhui Province ; Innovation Project for Overseas Researcher in Anhui Province
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/137329]  
专题中国科学院合肥物质科学研究院
通讯作者Chen, Xuegang
作者单位1.Anhui Univ, Sch Mat Sci & Engn, Hefei 230601, Peoples R China
2.Anhui Univ, Leibniz Int Joint Res Ctr Mat Sci Anhui Prov, Ctr Free Electron Laser & High Magnet Field, Hefei 230601, Peoples R China
3.Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China
4.Xi An Jiao Tong Univ, Ctr Spintron & Quantum Syst, Dept Mat Sci & Engn, State Key Lab Mech Behav Mat, Xian 710049, Peoples R China
5.Aspiring Semicond Beijing Co Ltd, Shanghai 200082, Peoples R China
6.Shanghai Aspiring Semicond Equipment Co Ltd, Shanghai 200082, Peoples R China
7.Chinese Acad Sci, High Magnet Field Lab, Anhui Prov Key Lab Condensed Matter Phys Extreme C, Hefei 230031, Peoples R China
8.Anhui Univ, Informat Mat & Intelligent Sensing Lab Anhui Prov, Anhui Key Lab Magnet Funct Mat & Devices, Hefei 230601, Peoples R China
9.Anhui Univ, Sch Phys & Optoelect Engn, Hefei 230601, Peoples R China
推荐引用方式
GB/T 7714
Zhang, Libo,Ye, Li,Zhao, Weiwei,et al. The Evaluation of Interface Quality in HfO2 Films Probed by Time-Dependent Second-Harmonic Generation[J]. MATERIALS,2024,17.
APA Zhang, Libo.,Ye, Li.,Zhao, Weiwei.,Huang, Chongji.,Liu, Xue.,...&Chen, Xuegang.(2024).The Evaluation of Interface Quality in HfO2 Films Probed by Time-Dependent Second-Harmonic Generation.MATERIALS,17.
MLA Zhang, Libo,et al."The Evaluation of Interface Quality in HfO2 Films Probed by Time-Dependent Second-Harmonic Generation".MATERIALS 17(2024).

入库方式: OAI收割

来源:合肥物质科学研究院

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