Growth and characterization of InAsSb alloys by metalorganic chemical vapour deposition
文献类型：期刊论文
| 作者 | Yan Jun-Feng1; Wang Tao2 ; Wang Jing-Wei2; Zhang Zhi-Yong1; Zhao Wu1,2
|
| 刊名 | chinese physics b
 |
| 出版日期 | 2009 |
| 卷号 | 18期号:1页码:320-323 |
| 关键词 | metalorganic chemical vapour deposition (MOCVD) antimonides semiconducting indium compounds |
| 合作状况 | 国内 |
| 英文摘要 | low pressure metalorganic chemical vapour deposition (lp-mocvd) growth and characteristics of inassb on (100) gasb substrates are investigated. mirror-like surfaces with a minimum lattice mismatch are obtained. the samples are studied by photoluminescence spectra, and the output is 3.17 mu m in wavelength. the surface of inassb epilayer shows that its morphological feature is dependent on buffer layer. with an inas buffer layer used, the best surface is obtained. the inassb film shows to be of n-type conduction with an electron concentration of 8.52 x 10(16) cm(-3). |
| WOS标题词 | science & technology ; physical sciences |
| 类目[WOS] | physics, multidisciplinary |
| 研究领域[WOS] | physics |
| 关键词[WOS] | mu-m ; gasb ; temperature ; gainassb ; mocvd |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000262494700052 |
| 公开日期 | 2010-01-12 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/5352]  |
| 专题 | 西安光学精密机械研究所_光电子学研究室 |
| 作者单位 | 1.Northwestern Univ, Sch Informat Sci & Technol, Xian 710069, Peoples R China 2.Chinese Acad Sci, Xian Inst Opt & Precis Mech, Xian 710068, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yan Jun-Feng,Wang Tao,Wang Jing-Wei,et al. Growth and characterization of InAsSb alloys by metalorganic chemical vapour deposition[J]. chinese physics b,2009,18(1):320-323. |
| APA | Yan Jun-Feng,Wang Tao,Wang Jing-Wei,Zhang Zhi-Yong,&Zhao Wu.(2009).Growth and characterization of InAsSb alloys by metalorganic chemical vapour deposition.chinese physics b,18(1),320-323. |
| MLA | Yan Jun-Feng,et al."Growth and characterization of InAsSb alloys by metalorganic chemical vapour deposition".chinese physics b 18.1(2009):320-323. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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