Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography
文献类型：期刊论文
| 作者 | Wu K ; Zhang YY; Wei TB; Lan D(蓝鼎); Sun B; Zheng HY; Lu HX; Chen Y; Wang JX; Luo Y
|
| 刊名 | AIP ADVANCES
 |
| 出版日期 | 2013-09 |
| 卷号 | 3期号:9页码:092124/1-092124/7 |
| 关键词 | LED GaN efficiency atomic force microscope(AFM) |
| ISSN号 | 2158-3226 |
| 产权排序 | [Wu, Kui; Zhang, Yiyun; Wei, Tongbo; Sun, Bo; Zheng, Haiyang; Lu, Hongxi; Chen, Yu; Wang, Junxi; Li, Jinmin] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China; [Wu, Kui; Luo, Yi] Tsinghua Univ, Tsinghua Natl Lab Informat Sci & Technol, State Key Lab Integrated Optoelect, Dept Elect Engn, Beijing 100084, Peoples R China; [Lan, Ding] Chinese Acad Sci, Inst Mech, Natl Micrograv Lab, Beijing 100080, Peoples R China |
| 通讯作者 | Wei, TB (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China. |
| 合作状况 | 国内 |
| 中文摘要 | The InGaN multiple quantum well light-emitting diodes (LEDs) with different sizes of indium-tin-oxide (ITO) nanobowl photonic crystal (PhC) structure has been fabricated using self-assembled monolayer nanosphere lithography. The light output power (LOP) of PhC LEDs (at 350 mA) has been enhanced by 63.5% and the emission divergence exhibits a 28.8 degrees reduction compared to conventional LEDs without PhC structure. Current-Voltage curves have shown that these PhC structures on ITO layer will not degrade the LED electrical properties. The finite-difference time-domain simulation (FDTD) has also been performed for light extraction and emission characteristics, which is consistent with the experimental results. |
| 学科主题 | 交叉与边缘领域的力学 |
| 分类号 | Q3 |
| 收录类别 | SCI ; EI |
| 资助信息 | National Natural Sciences Foundation of China [61274040, 61274008]; National Basic Research Program of China [2011CB301902]; National High Technology Program of China [2011AA03A105, 2011AA03A103] |
| 原文出处 | http://dx.doi.org/10.1063/1.4823478 |
| 语种 | 英语 |
| WOS记录号 | WOS:000325282900024 |
| 公开日期 | 2013-11-06 |
| 源URL | [http://dspace.imech.ac.cn/handle/311007/47503]  |
| 专题 | 力学研究所_国家微重力实验室 |
| 推荐引用方式 GB/T 7714 | Wu K,Zhang YY,Wei TB,et al. Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography[J]. AIP ADVANCES,2013,3(9):092124/1-092124/7. |
| APA | Wu K.,Zhang YY.,Wei TB.,Lan D.,Sun B.,...&Li JM.(2013).Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography.AIP ADVANCES,3(9),092124/1-092124/7. |
| MLA | Wu K,et al."Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography".AIP ADVANCES 3.9(2013):092124/1-092124/7. |
入库方式： OAI收割
来源：力学研究所
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