Atomistic studies of helium trapping and diffusion at Ni-graphene interfaces
文献类型:期刊论文
| 作者 | Huang, Hai3; Ge, Xiaoxin3; Yu, Xu2,3; Jiang, Yanxin3; Peng Q(彭庆)1 |
| 刊名 | EUROPEAN PHYSICAL JOURNAL PLUS
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| 出版日期 | 2025-06-06 |
| 卷号 | 140期号:6页码:7 |
| ISSN号 | 2190-5444 |
| DOI | 10.1140/epjp/s13360-025-06447-1 |
| 通讯作者 | Huang, Hai(huanghai@zzu.edu.cn) |
| 英文摘要 | The use of metal-nanocarbon interfaces to prevent the bubble-to-void transition has emerged as a novel approach for developing materials resistant to helium (He) embrittlement. However, many critical mechanisms governing He dynamics near these interfaces remain inadequately understood. Here we employed the Ni-graphene interface (NGI) as a model system to investigate He trapping and diffusion through atomistic simulations (300-1,200 K). Key findings demonstrate rapid He trapping at NGIs, with anisotropic in-plane diffusion (1 |
| 分类号 | 二类 |
| WOS关键词 | GRAIN-BOUNDARIES ; MIGRATION ; DYNAMICS ; BUBBLES ; ATOMS |
| 资助项目 | National Natural Science Foundation of China[12105249] ; National Natural Science Foundation of China[2025HYTP047] ; Young Talent Support Program of Henan Association for Science and Technology[242102230052] ; Key Project for Science and Technology Development of Henan Province[202102012] ; Henan Province Postdoctoral Science Foundation ; National Supercomputing Center in Zhengzhou |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:001503359500002 |
| 资助机构 | National Natural Science Foundation of China ; National Natural Science Foundation of China ; Young Talent Support Program of Henan Association for Science and Technology ; Key Project for Science and Technology Development of Henan Province ; Henan Province Postdoctoral Science Foundation ; National Supercomputing Center in Zhengzhou |
| 其他责任者 | Huang, Hai |
| 源URL | [http://dspace.imech.ac.cn/handle/311007/101796] ![]() |
| 专题 | 力学研究所_非线性力学国家重点实验室 |
| 作者单位 | 1.Chinese Acad Sci, Inst Mech, State Key Lab Nonlinear Mech, Beijing 100190, Peoples R China 2.Zhengzhou Univ, Sch Phys, Int Joint Lab Integrated Circuits Design & Applica, Minist Educ, Zhengzhou 450001, Peoples R China; 3.Zhengzhou Univ, Sch Phys, Key Lab Mat Phys, Minist Educ, Zhengzhou 450001, Peoples R China; |
| 推荐引用方式 GB/T 7714 | Huang, Hai,Ge, Xiaoxin,Yu, Xu,et al. Atomistic studies of helium trapping and diffusion at Ni-graphene interfaces[J]. EUROPEAN PHYSICAL JOURNAL PLUS,2025,140(6):7. |
| APA | Huang, Hai,Ge, Xiaoxin,Yu, Xu,Jiang, Yanxin,&彭庆.(2025).Atomistic studies of helium trapping and diffusion at Ni-graphene interfaces.EUROPEAN PHYSICAL JOURNAL PLUS,140(6),7. |
| MLA | Huang, Hai,et al."Atomistic studies of helium trapping and diffusion at Ni-graphene interfaces".EUROPEAN PHYSICAL JOURNAL PLUS 140.6(2025):7. |
入库方式: OAI收割
来源:力学研究所
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