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Investigation of surface morphology and dimensions in picosecond laser scribing of silicon wafer

文献类型：期刊论文

作者Shu Z(舒壮)2,4; Tian CX(田崇鑫)2,4; Zhang YM(张艳梅)2,4; Li ZY(李志永)2,4; Li, Peng1; He XL(何秀丽)2,3,4; Li SX(李少霞)2,4; Yu G(虞钢)2,3,4
刊名APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
出版日期2025-08-05
卷号131期号:9页码:16
关键词Silicon scribing Picosecond laser ablation Surface morphology Groove dimensions Processing efficiency
ISSN号0947-8396
DOI10.1007/s00339-025-08800-8
通讯作者He, Xiuli(xlhe@imech.ac.cn) ; Li, Shaoxia(lisx@imech.ac.cn)
英文摘要The miniaturization of microelectronics demands precise silicon wafer thinning, where conventional mechanical dicing introduces undesirable stress and defects, making laser scribing a viable alternative as a non-contact processing method. This study explores picosecond laser scribing of silicon wafer, aiming to analyze the scribing morphology and groove dimensions under different process parameters. A two-dimensional axisymmetric two-temperature model was developed to investigate the temperature distribution, phase transitions, and material removal mechanisms during the ablation process in picosecond laser scribing. The effects of pulse energy (ranging from 2.6 mu J to 16.8 mu J) and overlap rate of the laser beam (ranging from 0 to 95%) on the scribing process were systematically explored. The transition from discrete ablation points to undulating groove at the bottom and then to a continuous scribe line with increasing pulse energy and overlap rate is revealed. At 2.6 mu J pulse energy and 75% overlap rate, a wave-like pattern was observed, indicating that the silicon surface is molten during the pulse interval. Quantitative analysis of the dimensions of groove and recast layer shows a direct correlation with the process parameters. The results show that the groove width is mainly affected by the pulse energy. Higher overlap rates result in significant increase in groove depth, but also lead to substantial heat accumulation, evidenced by pronounced recast layers and altered scribing morphology. The relationship between material ablation rate (MAR), single pulse ablation rate (SPAR) and process parameters is investigated. The results reveal that there is a direct linear relationship between pulse energy and MAR. Additionally, higher overlap rates are found to enhance the MAR, particularly when the overlap rate exceeds 90%. However, the SPAR remains relatively stable for different overlap rates, except for the condition of high energy and high overlap rate, where the SPAR increases significantly. These findings inform the precise control of picosecond laser parameters, which is beneficial for advancing microelectronics manufacturing.
分类号二类
WOS关键词FEMTOSECOND ; ABLATION ; GROOVES ; PLASMA ; SI
资助项目National Key R&D Program of China[2023YFB4603701] ; Strategic Priority Research Program of Chinese Academy of Sciences[XDB0910203] ; National Natural Science Foundation of China[12472123] ; National Natural Science Foundation of China[12202448]
WOS研究方向Materials Science ; Physics
语种英语
WOS记录号WOS:001546342600002
资助机构National Key R&D Program of China ; Strategic Priority Research Program of Chinese Academy of Sciences ; National Natural Science Foundation of China
其他责任者何秀丽，李少霞
源URL[http://dspace.imech.ac.cn/handle/311007/102196]  
专题宽域飞行工程科学与应用中心
作者单位1.Shaanxi Baoguang Vacuum Elect Device Co Ltd, Baoji 721016, Peoples R China
2.Univ Chinese Acad Sci, Sch Engn Sci, Beijing 100049, Peoples R China;
3.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China;
4.Chinese Acad Sci, Inst Mech, Beijing 100190, Peoples R China;
推荐引用方式
GB/T 7714		 Shu Z,Tian CX,Zhang YM,et al. Investigation of surface morphology and dimensions in picosecond laser scribing of silicon wafer[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2025,131(9):16.
APA 舒壮.,田崇鑫.,张艳梅.,李志永.,Li, Peng.,...&虞钢.(2025).Investigation of surface morphology and dimensions in picosecond laser scribing of silicon wafer.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,131(9),16.
MLA 舒壮,et al."Investigation of surface morphology and dimensions in picosecond laser scribing of silicon wafer".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 131.9(2025):16.

入库方式： OAI收割

来源：力学研究所

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