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Photoluminescence properties of InP/GaP/ZnS core/shell/shell colloidal quantum dots treated with halogen acids

文献类型：期刊论文

作者Zhu, Yanqing2; Shen, Cong1,2; Xu, Xueqing2; Zou, Jianhua; Wang, Lei3; Cheng, Xudong2; Liang, Jingqiu4; Xiao, Xiudi2; Xu, Gang2
刊名JOURNAL OF LUMINESCENCE
出版日期2023-04-01
卷号256页码:9
关键词InP Quantum dots Halogen acids Photoluminescence Recombination
ISSN号0022-2313
DOI10.1016/j.jlumin.2022.119651
通讯作者Xu, Xueqing(xuxq@ms.giec.ac.cn) ; Xu, Gang(xugang@ms.giec.ac.cn)
英文摘要InP quantum dots (QDs) with low toxicity are considered to be the most promising materials. However, the oxidation problem of In and P has become to the major factor affecting the optical properties of InP QDs. In this work, the effect of luminescence properties of InP/GaP/ZnS QDs with halogen acid treatment have been studied. The results show that HF and HCl are beneficial to improve the optical properties of QDs, HBr especially HI are not conductive to promote the photoluminescence quantum yield (PL QY) of QDs. HF and HCl can etch the oxidative layer effectively, the F- and Cl- can also passivate the surface indium dangling bonds in the form of atomic ligands. The proposed model of charge carrier recombination show that the PL QY improved significantly after HA treatment attributed to the recombination of electron-hole pairs through radiative pathways mainly from the conduction band and valence band. The InP QDs with HF treatment has the best luminescence properties with high PL QY of 96%, offering great potential for advanced optoelectronic devices.
WOS关键词HIGHLY EFFICIENT ; SURFACE-DEFECTS ; INP ; LUMINESCENCE ; INDIUM
资助项目Science and Technology Planning Project of Guangzhou[202007020004] ; Strategic Priority Research Program of the Chinese Academy of Sciences, China[XDA21061001]
WOS研究方向Optics
语种英语
WOS记录号WOS:000913847300001
出版者ELSEVIER
资助机构Science and Technology Planning Project of Guangzhou ; Strategic Priority Research Program of the Chinese Academy of Sciences, China
源URL[http://ir.giec.ac.cn/handle/344007/38395]  
专题中国科学院广州能源研究所
通讯作者Xu, Xueqing; Xu, Gang
作者单位1.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
2.Chinese Acad Sci, Guangzhou Inst Energy Convers, Key Lab Renewable Energy, Guangdong Prov Key Lab New & Renewable Energy Res, Guangzhou 510640, Peoples R China
3.Guangzhou New Vis Optoelect Technol Co Ltd, Guangzhou 510530, Peoples R China
4.Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China
推荐引用方式
GB/T 7714		 Zhu, Yanqing,Shen, Cong,Xu, Xueqing,et al. Photoluminescence properties of InP/GaP/ZnS core/shell/shell colloidal quantum dots treated with halogen acids[J]. JOURNAL OF LUMINESCENCE,2023,256:9.
APA Zhu, Yanqing.,Shen, Cong.,Xu, Xueqing.,Zou, Jianhua.,Wang, Lei.,...&Xu, Gang.(2023).Photoluminescence properties of InP/GaP/ZnS core/shell/shell colloidal quantum dots treated with halogen acids.JOURNAL OF LUMINESCENCE,256,9.
MLA Zhu, Yanqing,et al."Photoluminescence properties of InP/GaP/ZnS core/shell/shell colloidal quantum dots treated with halogen acids".JOURNAL OF LUMINESCENCE 256(2023):9.

入库方式： OAI收割

来源：广州能源研究所

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