Crystal structure, Bi3+ yellow luminescence, and high quantum efficiency of Ba3SbAl3Ge2O14:Bi3+ phosphor for white light-emitting diodes
文献类型：期刊论文
| 作者 | Fei, Huihui1; Jing, Baolong1,2; Han, Jin1,2; Shan, Kaian1; Cheng, Dongming1; Xu, Xueqing2; Zhang, Xinmin1; Wang, Jing3 |
| 刊名 | INORGANIC CHEMISTRY FRONTIERS
 |
| 出版日期 | 2024-03-18 |
| 页码 | 10 |
| ISSN号 | 2052-1553 |
| DOI | 10.1039/d4qi00240g |
| 通讯作者 | Han, Jin(hanjin@csuft.edu.cn) ; Xu, Xueqing(xuxq@ms.giec.ac.cn) ; Wang, Jing(ceswj@mail.sysu.edu.cn) |
| 英文摘要 | Bi3+-activated luminescent materials have attracted increasing attention owing to their strong excitation in the near-ultraviolet (NUV) range instead of the visible range. Such a unique feature allows them to avoid reabsorption among phosphors, resulting in their growing popularity in research and applications. However, the majority of Bi3+-doped phosphors suffer from low quantum efficiency, imposing limitations on their practical applications. We hereby present a newly developed phosphor, Ba3SbAl3Ge2O14:Bi3+ (BSAG:Bi3+), which emits a vibrant yellow light when excited by NUV light. Importantly, this phosphor exhibits a high internal quantum efficiency (IQE) of 95.3%, marking a significant advancement in the field. Through charge compensation, BSAG:Bi3+, K+ phosphor achieves a remarkable IQE of 97.2%. The photoluminescence (PL) spectroscopy analysis reveals that this phosphor contains only one Bi3+ luminescent center, which is consistent with the trigonal structure of BSAG. This is supported by the fact that only one Ba site in the structure can accept Bi3+ ions. The critical distance was estimated to be 9.71 & Aring;. The energy transfer mechanism between Bi3+ ions was determined as a dipole-dipole interaction. To explore the application of BSAG:Bi3+ phosphor, pc-WLED devices were fabricated by depositing a blend of this phosphor and one or two commercial phosphors on a 365 nm chip. The final warm pc-WLED device exhibits ideal photoelectric performance with a low CCT of 4229 K and a high Ra of 91.5. |
| WOS关键词 | PHOTOLUMINESCENCE ; IMPROVEMENT ; EXCITATION ; EMISSION |
| 资助项目 | Natural Science Foundation of Hunan Province[2020JJ5983] ; Hunan Provincial Natural Science Foundation[23C0106] ; Scientific Research Fund of Hunan Provincial Education Department |
| WOS研究方向 | Chemistry |
| 语种 | 英语 |
| WOS记录号 | WOS:001195170600001 |
| 出版者 | ROYAL SOC CHEMISTRY |
| 资助机构 | Natural Science Foundation of Hunan Province ; Hunan Provincial Natural Science Foundation ; Scientific Research Fund of Hunan Provincial Education Department |
| 源URL | [http://ir.giec.ac.cn/handle/344007/41321]  |
| 专题 | 中国科学院广州能源研究所 |
| 通讯作者 | Han, Jin; Xu, Xueqing; Wang, Jing |
| 作者单位 | 1.Cent South Univ Forestry & Technol, Sch Mat Sci & Engn, Hunan Prov Key Lab Mat Surface & Interface Sci & T, Changsha 410004, Peoples R China 2.Chinese Acad Sci, Guangzhou Inst Energy Convers, Guangzhou 510640, Peoples R China 3.Sun Yat Sen Univ, Sch Chem, Guangzhou 510275, Peoples R China |
| 推荐引用方式 GB/T 7714 | Fei, Huihui,Jing, Baolong,Han, Jin,et al. Crystal structure, Bi3+ yellow luminescence, and high quantum efficiency of Ba3SbAl3Ge2O14:Bi3+ phosphor for white light-emitting diodes[J]. INORGANIC CHEMISTRY FRONTIERS,2024:10. |
| APA | Fei, Huihui.,Jing, Baolong.,Han, Jin.,Shan, Kaian.,Cheng, Dongming.,...&Wang, Jing.(2024).Crystal structure, Bi3+ yellow luminescence, and high quantum efficiency of Ba3SbAl3Ge2O14:Bi3+ phosphor for white light-emitting diodes.INORGANIC CHEMISTRY FRONTIERS,10. |
| MLA | Fei, Huihui,et al."Crystal structure, Bi3+ yellow luminescence, and high quantum efficiency of Ba3SbAl3Ge2O14:Bi3+ phosphor for white light-emitting diodes".INORGANIC CHEMISTRY FRONTIERS (2024):10. |
入库方式： OAI收割
来源：广州能源研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。