First Principle Study on Schottky Barrier at Ni/Graphene/4H-SiC Interface
文献类型：期刊论文
| 作者 | Wang, Congcong; Jiang, Zhenyu; Huang, Yingjie; Wu, Siyu |
| 刊名 | Journal of Physics: Conference Series
 |
| 出版日期 | 2024 |
| 卷号 | 2737期号:1 |
| ISSN号 | 1742-6588 |
| DOI | 10.1088/1742-6596/2737/1/012005 |
| 文献子类 | Proceedings Paper |
| 电子版国际标准刊号 | 1742-6596 |
| 源URL | [https://ir.ihep.ac.cn/handle/311005/305842]  |
| 专题 | 高能物理研究所_实验物理中心 |
| 推荐引用方式 GB/T 7714 | Wang, Congcong,Jiang, Zhenyu,Huang, Yingjie,et al. First Principle Study on Schottky Barrier at Ni/Graphene/4H-SiC Interface[J]. Journal of Physics: Conference Series,2024,2737(1). |
| APA | Wang, Congcong,Jiang, Zhenyu,Huang, Yingjie,&Wu, Siyu.(2024).First Principle Study on Schottky Barrier at Ni/Graphene/4H-SiC Interface.Journal of Physics: Conference Series,2737(1). |
| MLA | Wang, Congcong,et al."First Principle Study on Schottky Barrier at Ni/Graphene/4H-SiC Interface".Journal of Physics: Conference Series 2737.1(2024). |
入库方式： OAI收割
来源：高能物理研究所
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