中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Study on schottky barrier of Cu/Graphene/4H-SiC interface based on first principles

文献类型:期刊论文

作者Wang, Congcong; Wu, Siyu; Jiang, Zhenyu; Huang, Yingjie
刊名Journal of Physics: Conference Series
出版日期2024
卷号2720期号:1
ISSN号1742-6588
DOI10.1088/1742-6596/2720/1/012001
文献子类Proceedings Paper
电子版国际标准刊号1742-6596
源URL[https://ir.ihep.ac.cn/handle/311005/306380]  
专题高能物理研究所_实验物理中心
推荐引用方式
GB/T 7714
Wang, Congcong,Wu, Siyu,Jiang, Zhenyu,et al. Study on schottky barrier of Cu/Graphene/4H-SiC interface based on first principles[J]. Journal of Physics: Conference Series,2024,2720(1).
APA Wang, Congcong,Wu, Siyu,Jiang, Zhenyu,&Huang, Yingjie.(2024).Study on schottky barrier of Cu/Graphene/4H-SiC interface based on first principles.Journal of Physics: Conference Series,2720(1).
MLA Wang, Congcong,et al."Study on schottky barrier of Cu/Graphene/4H-SiC interface based on first principles".Journal of Physics: Conference Series 2720.1(2024).

入库方式: OAI收割

来源:高能物理研究所

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