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Influence of low-temperature sulfidation on the structure of ZnS thin films

文献类型：期刊论文

作者Chen, SZ; Song, LG; Zhang, P; Cao, XZ; Yu, RS; Wang, BY; Wei, L; Zhang, RG
刊名CHINESE PHYSICS B
出版日期2019
卷号28期号:2页码:24214
关键词ZnS thin films low-temperature sulfidation Doppler broadening measurements
ISSN号1674-1056
DOI10.1088/1674-1056/28/2/024214
文献子类期刊
英文摘要ZnS thin films were prepared by sulfuring zinc thin films at different sulfuration temperatures. The crystal structure, surface morphology, defects, and optical properties of the thin films were characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM), positron annihilation Doppler broadening, and UV-Vis spectrophotometer, respectively. It was found that the (200)-plane preferred orientation of the ZnS thin films changed to (111)-plane with increasing sulfidation temperature. Moreover, a number of large holes were generated at 420 degrees C and eliminated at 440 degrees C. The concentration of defects was lowest when the sulfuration temperature was 440 degrees C. The optical transmission of all samples was maintained at 60%-80% in the wavelength range of 400 nm-800 nm, and the band energy of the ZnS thin films was approximately 3.5 eV for all treatment temperatures except 430 degrees C.
电子版国际标准刊号1741-4199
WOS关键词OPTICAL-PROPERTIES ; VISIBLE-LIGHT ; DOPED ZNS
WOS研究方向Physics
语种英语
WOS记录号WOS:000458917000014
源URL[https://ir.ihep.ac.cn/handle/311005/304309]  
专题高能物理研究所_粒子天体物理中心
作者单位中国科学院高能物理研究所
推荐引用方式
GB/T 7714		 Chen, SZ,Song, LG,Zhang, P,et al. Influence of low-temperature sulfidation on the structure of ZnS thin films[J]. CHINESE PHYSICS B,2019,28(2):24214.
APA Chen, SZ.,Song, LG.,Zhang, P.,Cao, XZ.,Yu, RS.,...&Zhang, RG.(2019).Influence of low-temperature sulfidation on the structure of ZnS thin films.CHINESE PHYSICS B,28(2),24214.
MLA Chen, SZ,et al."Influence of low-temperature sulfidation on the structure of ZnS thin films".CHINESE PHYSICS B 28.2(2019):24214.

入库方式： OAI收割

来源：高能物理研究所

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