ZnO退火条件对硫化法制备的ZnS薄膜特性的影响
文献类型：期刊论文
| 作者 | Wang, BY; Zhang, RG; Hui, Z; Wan, DY; Long, W |
| 刊名 | 物理学报;Acta Physica Sinica
 |
| 出版日期 | 2005 |
| 卷号 | 54期号:4页码:1874-1878 |
| 关键词 | ZnS films magnetron sputtering sulfidation of ZnO solar cells |
| ISSN号 | 1000-3290 |
| DOI | 10.7498/aps.54.1874 |
| 文献子类 | 期刊 |
| 英文摘要 | ZnS films are prepared on glass and quartz substrates by suffidation of the ZnO films which are deposited via reactive magnetron sputtering and annealed under various conditions. The sulfurized films are characterized by using x-ray diffraction, scanning electron microscope and UV-VIS spectrometer. The results show that the crystalline structure and optical properties of the sutfurized films depend on the annealing conditions. ZnO films annealed in vacuum and pure O-2 atmosphere, respectively, are converted partially to the hexagonal ZnS, while the annealed ZnO films in air and pure N-2, respectively, are converted totally to ZnS. Also the ZnS films produced by sulfurizing the annealed ZnO films in air and pure N-2, respectively, have a high optical transmittance of about 80% at the wavelength of 400-800 nm, with the band-gap energies of 3.66 and 3.61 eV, respectively. |
| WOS关键词 | SULFIDE THIN-FILMS ; X-RAY-DIFFRACTION ; ELECTROLUMINESCENT DEVICES ; OPTICAL-PROPERTIES ; PULSED-LASER ; MN ; DEPOSITION ; GROWTH ; SI |
| WOS研究方向 | Physics |
| 语种 | 中文 |
| WOS记录号 | WOS:000228510600073 |
| 源URL | [https://ir.ihep.ac.cn/handle/311005/304158]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Wang, BY,Zhang, RG,Hui, Z,等. ZnO退火条件对硫化法制备的ZnS薄膜特性的影响[J]. 物理学报;Acta Physica Sinica,2005,54(4):1874-1878. |
| APA | Wang, BY,Zhang, RG,Hui, Z,Wan, DY,&Long, W.(2005).ZnO退火条件对硫化法制备的ZnS薄膜特性的影响.物理学报;Acta Physica Sinica,54(4),1874-1878. |
| MLA | Wang, BY,et al."ZnO退火条件对硫化法制备的ZnS薄膜特性的影响".物理学报;Acta Physica Sinica 54.4(2005):1874-1878. |
入库方式： OAI收割
来源：高能物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。