锆离子注入锆-4合金缺陷的慢正电子研究
文献类型：期刊论文
| 作者 | Hao, XP; Wang, BY; Yu, RS; Wei, L |
| 刊名 | 物理学报;Acta Physica Sinica
 |
| 出版日期 | 2007 |
| 卷号 | 56期号:11页码:6543-6546 |
| 关键词 | zirconium-ion implantation slow positron beam defect |
| ISSN号 | 1000-3290 |
| DOI | 10.7498/aps.56.6543 |
| 文献子类 | 期刊 |
| 英文摘要 | The effect of Zr-ion implantation into zircaloy-4 and the defect recovery was investigated by slow positron beam. Specimens were implanted by zirconium ions with doses ranging from 1 X 10(15) to 1 X 10(17) ions/cm(2) using a MEVVA source at an extract voltage of 50 kV. It was found that defects in the samples irradiated with a dose above I X 10(16) ions/Cm-2 has been recovered during the implantation process, and the thickness of oxide layer increases as indicated by auger electron spectroscopy (AES) measurements. Meanwhile, the defects in the sample implanted with a dose of 1 X 10(15) ions/Cm-2 turns out to be recovered after annealing at 300 degrees C in high vacuum for 1 hour, showing the corresponding the recovery energy of defects is very low. We propose the method of keeping the material at an appropriate temperature during implantation to improve the corrosion resistance of Zr-4 alloy, according to the relationship between the defect concentration and the corrosion resistance. |
| WOS研究方向 | Physics |
| 语种 | 中文 |
| WOS记录号 | WOS:000251093800064 |
| 源URL | [https://ir.ihep.ac.cn/handle/311005/304174]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Hao, XP,Wang, BY,Yu, RS,等. 锆离子注入锆-4合金缺陷的慢正电子研究[J]. 物理学报;Acta Physica Sinica,2007,56(11):6543-6546. |
| APA | Hao, XP,Wang, BY,Yu, RS,&Wei, L.(2007).锆离子注入锆-4合金缺陷的慢正电子研究.物理学报;Acta Physica Sinica,56(11),6543-6546. |
| MLA | Hao, XP,et al."锆离子注入锆-4合金缺陷的慢正电子研究".物理学报;Acta Physica Sinica 56.11(2007):6543-6546. |
入库方式： OAI收割
来源：高能物理研究所
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