Study of the Behavior of Positronium Annihilation in Porous Silicon
文献类型：期刊论文
| 作者 | Wang, BY; Yu, RS; Cao, XZ; Li, ZX; Zhang, P; Qin, XB; Wei, L; Kurihara, T |
| 刊名 | Materials Science Forum
 |
| 出版日期 | 2013 |
| 卷号 | 733页码:203-206 |
| 关键词 | Positron annihilation Positronium Porous silicon |
| ISSN号 | 0255-5476 |
| DOI | 10.4028/www.scientific.net/MSF.733.203 |
| 文献子类 | Article |
| 英文摘要 | The annihilation behavior of positronium in N and P type porous silicon is investigated via positron annihilation lifetime (PAL) and positronium time-of-flight (Ps-TOF) measurements. The result shows the N type sample has smaller positronium annihilation fraction and more interconnected pores. The microstructure of Rapid Thermal Oxidation (RTO) treated N type porous silicon also studied using PAL spectroscopy, and the relationship between its photoluminescence properties and porous structure was discussed. © (2013) Trans Tech Publications, Switzerland. |
| 电子版国际标准刊号 | 16629752 |
| WOS关键词 | SPECTRA |
| WOS研究方向 | Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000315535700042 |
| 源URL | [https://ir.ihep.ac.cn/handle/311005/304280]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Wang, BY,Yu, RS,Cao, XZ,et al. Study of the Behavior of Positronium Annihilation in Porous Silicon[J]. Materials Science Forum,2013,733:203-206. |
| APA | Wang, BY.,Yu, RS.,Cao, XZ.,Li, ZX.,Zhang, P.,...&Kurihara, T.(2013).Study of the Behavior of Positronium Annihilation in Porous Silicon.Materials Science Forum,733,203-206. |
| MLA | Wang, BY,et al."Study of the Behavior of Positronium Annihilation in Porous Silicon".Materials Science Forum 733(2013):203-206. |
入库方式： OAI收割
来源：高能物理研究所
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