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Implantation profiles of muon and secondary positron simulated by Geant4

文献类型：期刊论文

作者Li, C; Cao, XZ; Kuang, P; Liu, FY; Chen, YK; Li, Y; Wei, L
刊名PHYSICA SCRIPTA
出版日期2021
卷号96期号:12页码:125305
关键词Geant4 muon beam secondary positrons implantation profile transmission imaging
ISSN号0031-8949
DOI10.1088/1402-4896/ac1dc8
文献子类期刊
英文摘要The distribution of muon beams and secondary positrons can be vital reference data for the application of the accelerator muon transmission imaging technique. In this study, the distribution of muon beams and secondary positrons in biological tissue, semiconductors, and metals was simulated using Geant4. The muon beam showed an extremely concentrated decay area, which presented quite high depth resolution (FWHM ranging from 1.68 cm to 11.83 cm) and great penetrability (mean depth ranging from 18.03 cm to 198.97 cm) in media. Based on the simulation data, an empirical equation was designed for the quick calculation of muon beams with different energies in various materials. Additionally, the secondary positrons distribution of a 200 MeV muon beam centered on its decay position and covered an 8.50 cm radius area in Fe. The number of positrons was much higher than that of primary muons, especially in high-density materials. As a consequence of these two aspects, the combined signal processing of muons and secondary positrons provides the potential to improve muon imaging.
电子版国际标准刊号1402-4896
WOS关键词FACILITIES ; PROPOSAL
WOS研究方向Physics
语种英语
WOS记录号WOS:000688235700001
源URL[https://ir.ihep.ac.cn/handle/311005/304402]  
专题高能物理研究所_多学科研究中心
作者单位中国科学院高能物理研究所
推荐引用方式
GB/T 7714		 Li, C,Cao, XZ,Kuang, P,et al. Implantation profiles of muon and secondary positron simulated by Geant4[J]. PHYSICA SCRIPTA,2021,96(12):125305.
APA Li, C.,Cao, XZ.,Kuang, P.,Liu, FY.,Chen, YK.,...&Wei, L.(2021).Implantation profiles of muon and secondary positron simulated by Geant4.PHYSICA SCRIPTA,96(12),125305.
MLA Li, C,et al."Implantation profiles of muon and secondary positron simulated by Geant4".PHYSICA SCRIPTA 96.12(2021):125305.

入库方式： OAI收割

来源：高能物理研究所

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