Theoretical prediction of two-dimensional 1T-MSiN3 (M = V, Nb) with direct bandgap and long carrier lifetime
文献类型：期刊论文
| 作者 | Yan, L; Huang, AQ; Wang, BT; Si, JG; Ding, YM; Zhou, LJ |
| 刊名 | PHYSICAL REVIEW B
 |
| 出版日期 | 2023 |
| 卷号 | 108期号:15页码:155309 |
| ISSN号 | 2469-9950 |
| DOI | 10.1103/PhysRevB.108.155309 |
| 文献子类 | Article |
| 电子版国际标准刊号 | 2469-9969 |
| WOS记录号 | WOS:001095208200005 |
| 源URL | [https://ir.ihep.ac.cn/handle/311005/305070]  |
| 专题 | 高能物理研究所_东莞分部 |
| 推荐引用方式 GB/T 7714 | Yan, L,Huang, AQ,Wang, BT,et al. Theoretical prediction of two-dimensional 1T-MSiN3 (M = V, Nb) with direct bandgap and long carrier lifetime[J]. PHYSICAL REVIEW B,2023,108(15):155309. |
| APA | Yan, L,Huang, AQ,Wang, BT,Si, JG,Ding, YM,&Zhou, LJ.(2023).Theoretical prediction of two-dimensional 1T-MSiN3 (M = V, Nb) with direct bandgap and long carrier lifetime.PHYSICAL REVIEW B,108(15),155309. |
| MLA | Yan, L,et al."Theoretical prediction of two-dimensional 1T-MSiN3 (M = V, Nb) with direct bandgap and long carrier lifetime".PHYSICAL REVIEW B 108.15(2023):155309. |
入库方式： OAI收割
来源：高能物理研究所
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