中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
B 位空位补偿型钐掺杂PZT(54/46) 陶瓷中的缺陷分析及其对压电性能的影响Analysis of defects in B-vacancy compensated Sm-doped PZT(54/46) ceramics and their influences on piezoelectric properties

文献类型:期刊论文

作者Yang, J; Feng, SR; Zhang, T; Niu, XP; Wang, R; Li, M; Yu, RS; Cao, XZ; Wang, BY
刊名ACTA PHYSICA SINICA 物理学报
出版日期2024
卷号73期号:7页码:77701
ISSN号1000-3290
DOI10.7498/aps.73.20231872
其他题名Analysis of defects in B-vacancy compensated Sm-doped PZT(54/46) ceramics and their influences on piezoelectric properties
文献子类Article
WOS记录号WOS:001208803400028
源URL[https://ir.ihep.ac.cn/handle/311005/305374]  
专题高能物理研究所_多学科研究中心
推荐引用方式
GB/T 7714
Yang, J,Feng, SR,Zhang, T,等. B 位空位补偿型钐掺杂PZT(54/46) 陶瓷中的缺陷分析及其对压电性能的影响Analysis of defects in B-vacancy compensated Sm-doped PZT(54/46) ceramics and their influences on piezoelectric properties[J]. ACTA PHYSICA SINICA 物理学报,2024,73(7):77701.
APA Yang, J.,Feng, SR.,Zhang, T.,Niu, XP.,Wang, R.,...&Wang, BY.(2024).B 位空位补偿型钐掺杂PZT(54/46) 陶瓷中的缺陷分析及其对压电性能的影响Analysis of defects in B-vacancy compensated Sm-doped PZT(54/46) ceramics and their influences on piezoelectric properties.ACTA PHYSICA SINICA 物理学报,73(7),77701.
MLA Yang, J,et al."B 位空位补偿型钐掺杂PZT(54/46) 陶瓷中的缺陷分析及其对压电性能的影响Analysis of defects in B-vacancy compensated Sm-doped PZT(54/46) ceramics and their influences on piezoelectric properties".ACTA PHYSICA SINICA 物理学报 73.7(2024):77701.

入库方式: OAI收割

来源:高能物理研究所

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