Intrinsic Magnetocrystalline Anisotropy Induced 3m-Symmetry Dependent Field-Free Switching in Epitaxial Garnet Films
文献类型:期刊论文
| 作者 | Ke, JT; Zhang, DL; Bi, LZ; Li, ZL; Zhou, S; Wang, PJ; Zhu, ZZ; Bai, H; Li, GS; Zhu, M |
| 刊名 | PHYSICAL REVIEW LETTERS
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| 出版日期 | 2024 |
| 卷号 | 133期号:18页码:186703 |
| ISSN号 | 0031-9007 |
| DOI | 10.1103/PhysRevLett.133.186703 |
| 文献子类 | Article |
| 电子版国际标准刊号 | 1079-7114 |
| WOS记录号 | WOS:001350555000006 |
| 源URL | [https://ir.ihep.ac.cn/handle/311005/305523] ![]() |
| 专题 | 高能物理研究所_东莞分部 |
| 推荐引用方式 GB/T 7714 | Ke, JT,Zhang, DL,Bi, LZ,et al. Intrinsic Magnetocrystalline Anisotropy Induced 3m-Symmetry Dependent Field-Free Switching in Epitaxial Garnet Films[J]. PHYSICAL REVIEW LETTERS,2024,133(18):186703. |
| APA | Ke, JT.,Zhang, DL.,Bi, LZ.,Li, ZL.,Zhou, S.,...&Cai, JW.(2024).Intrinsic Magnetocrystalline Anisotropy Induced 3m-Symmetry Dependent Field-Free Switching in Epitaxial Garnet Films.PHYSICAL REVIEW LETTERS,133(18),186703. |
| MLA | Ke, JT,et al."Intrinsic Magnetocrystalline Anisotropy Induced 3m-Symmetry Dependent Field-Free Switching in Epitaxial Garnet Films".PHYSICAL REVIEW LETTERS 133.18(2024):186703. |
入库方式: OAI收割
来源:高能物理研究所
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