中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Intrinsic Magnetocrystalline Anisotropy Induced 3m-Symmetry Dependent Field-Free Switching in Epitaxial Garnet Films

文献类型:期刊论文

作者Ke, JT; Zhang, DL; Bi, LZ; Li, ZL; Zhou, S; Wang, PJ; Zhu, ZZ; Bai, H; Li, GS; Zhu, M
刊名PHYSICAL REVIEW LETTERS
出版日期2024
卷号133期号:18页码:186703
ISSN号0031-9007
DOI10.1103/PhysRevLett.133.186703
文献子类Article
电子版国际标准刊号1079-7114
WOS记录号WOS:001350555000006
源URL[https://ir.ihep.ac.cn/handle/311005/305523]  
专题高能物理研究所_东莞分部
推荐引用方式
GB/T 7714
Ke, JT,Zhang, DL,Bi, LZ,et al. Intrinsic Magnetocrystalline Anisotropy Induced 3m-Symmetry Dependent Field-Free Switching in Epitaxial Garnet Films[J]. PHYSICAL REVIEW LETTERS,2024,133(18):186703.
APA Ke, JT.,Zhang, DL.,Bi, LZ.,Li, ZL.,Zhou, S.,...&Cai, JW.(2024).Intrinsic Magnetocrystalline Anisotropy Induced 3m-Symmetry Dependent Field-Free Switching in Epitaxial Garnet Films.PHYSICAL REVIEW LETTERS,133(18),186703.
MLA Ke, JT,et al."Intrinsic Magnetocrystalline Anisotropy Induced 3m-Symmetry Dependent Field-Free Switching in Epitaxial Garnet Films".PHYSICAL REVIEW LETTERS 133.18(2024):186703.

入库方式: OAI收割

来源:高能物理研究所

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