The impact of negative gate voltage on neutron-induced single event effects for SiC MOSFETs
文献类型：期刊论文
| 作者 | Wang, HB; Nie, ZC; Huang, XF; Gu, JH; Tan, ZX; Jing, HT; Mo, LH; Hu, ZL; Wang, XM |
| 刊名 | MICROELECTRONICS RELIABILITY
 |
| 出版日期 | 2024 |
| 卷号 | 163页码:115547 |
| ISSN号 | 0026-2714 |
| DOI | 10.1016/j.microrel.2024.115547 |
| 文献子类 | Article |
| 电子版国际标准刊号 | 1872-941X |
| WOS记录号 | WOS:001358766000001 |
| 源URL | [https://ir.ihep.ac.cn/handle/311005/305535]  |
| 专题 | 高能物理研究所_东莞分部 |
| 推荐引用方式 GB/T 7714 | Wang, HB,Nie, ZC,Huang, XF,et al. The impact of negative gate voltage on neutron-induced single event effects for SiC MOSFETs[J]. MICROELECTRONICS RELIABILITY,2024,163:115547. |
| APA | Wang, HB.,Nie, ZC.,Huang, XF.,Gu, JH.,Tan, ZX.,...&Wang, XM.(2024).The impact of negative gate voltage on neutron-induced single event effects for SiC MOSFETs.MICROELECTRONICS RELIABILITY,163,115547. |
| MLA | Wang, HB,et al."The impact of negative gate voltage on neutron-induced single event effects for SiC MOSFETs".MICROELECTRONICS RELIABILITY 163(2024):115547. |
入库方式： OAI收割
来源：高能物理研究所
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