Study on the affecting factors of material removal mechanism and damage behavior of shear rheological polishing of single crystal silicon carbide
文献类型：期刊论文
| 作者 | Chen, HY; Wu, ZC; Hong, BB; Hang, W; Zhang, P; Cao, XZ; Xu, Q; Chen, PQ; Chen, H; Yuan, JL |
| 刊名 | JOURNAL OF MANUFACTURING PROCESSES
 |
| 出版日期 | 2024 |
| 卷号 | 112页码:225-237 |
| ISSN号 | 1526-6125 |
| DOI | 10.1016/j.jmapro.2024.01.040 |
| 文献子类 | Article |
| 电子版国际标准刊号 | 2212-4616 |
| WOS记录号 | WOS:001174184600001 |
| 源URL | [https://ir.ihep.ac.cn/handle/311005/306381]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 推荐引用方式 GB/T 7714 | Chen, HY,Wu, ZC,Hong, BB,et al. Study on the affecting factors of material removal mechanism and damage behavior of shear rheological polishing of single crystal silicon carbide[J]. JOURNAL OF MANUFACTURING PROCESSES,2024,112:225-237. |
| APA | Chen, HY.,Wu, ZC.,Hong, BB.,Hang, W.,Zhang, P.,...&Lin, HT.(2024).Study on the affecting factors of material removal mechanism and damage behavior of shear rheological polishing of single crystal silicon carbide.JOURNAL OF MANUFACTURING PROCESSES,112,225-237. |
| MLA | Chen, HY,et al."Study on the affecting factors of material removal mechanism and damage behavior of shear rheological polishing of single crystal silicon carbide".JOURNAL OF MANUFACTURING PROCESSES 112(2024):225-237. |
入库方式： OAI收割
来源：高能物理研究所
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