Wafer Scale Gallium Nitride Integrated Electrode Toward Robust High Temperature Energy Storage
文献类型：期刊论文
| 作者 | Lv, Songyang; Wang, Shouzhi; Yu, Jiaoxian; Tian, Ge; Wang, Guodong; An, Pengfei; Song, Kepeng; Ma, Bo; Li, Yangyang; Xu, Xiangang |
| 刊名 | SMALL
 |
| 出版日期 | 2024 |
| 卷号 | 20期号:27页码:2310837 |
| ISSN号 | 1613-6810 |
| DOI | 10.1002/smll.202310837 |
| 文献子类 | Article |
| 电子版国际标准刊号 | 1613-6829 |
| WOS记录号 | WOS:001205756100001 |
| 源URL | [https://ir.ihep.ac.cn/handle/311005/306980]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 推荐引用方式 GB/T 7714 | Lv, Songyang,Wang, Shouzhi,Yu, Jiaoxian,et al. Wafer Scale Gallium Nitride Integrated Electrode Toward Robust High Temperature Energy Storage[J]. SMALL,2024,20(27):2310837. |
| APA | Lv, Songyang.,Wang, Shouzhi.,Yu, Jiaoxian.,Tian, Ge.,Wang, Guodong.,...&Zhang, Lei.(2024).Wafer Scale Gallium Nitride Integrated Electrode Toward Robust High Temperature Energy Storage.SMALL,20(27),2310837. |
| MLA | Lv, Songyang,et al."Wafer Scale Gallium Nitride Integrated Electrode Toward Robust High Temperature Energy Storage".SMALL 20.27(2024):2310837. |
入库方式： OAI收割
来源：高能物理研究所
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