High-precision X-ray characterization for basic materials in modern high-end integrated circuit
文献类型：期刊论文
| 作者 | Zhao, Weiran; Mo, Qiuqi; Zheng, Li; Li, Zhongliang; Zhang, Xiaowei; Yu, Yuehui |
| 刊名 | Journal of Semiconductors
 |
| 出版日期 | 2024 |
| 卷号 | 45期号:7 |
| DOI | 10.1088/1674-4926/24030016 |
| 文献子类 | Article |
| 源URL | [https://ir.ihep.ac.cn/handle/311005/307360]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 推荐引用方式 GB/T 7714 | Zhao, Weiran,Mo, Qiuqi,Zheng, Li,et al. High-precision X-ray characterization for basic materials in modern high-end integrated circuit[J]. Journal of Semiconductors,2024,45(7). |
| APA | Zhao, Weiran,Mo, Qiuqi,Zheng, Li,Li, Zhongliang,Zhang, Xiaowei,&Yu, Yuehui.(2024).High-precision X-ray characterization for basic materials in modern high-end integrated circuit.Journal of Semiconductors,45(7). |
| MLA | Zhao, Weiran,et al."High-precision X-ray characterization for basic materials in modern high-end integrated circuit".Journal of Semiconductors 45.7(2024). |
入库方式： OAI收割
来源：高能物理研究所
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