Impact of proton-induced total ionizing dose effects on electrical characteristics and safe operating area of trench field-stop IGBT devices
文献类型：期刊论文
| 作者 | Liu, ZH; Huang, XF; Mo, LH; Hu, ZL; Lin, M; Qi, LA; Wang, HB |
| 刊名 | MICROELECTRONICS RELIABILITY
 |
| 出版日期 | 2024 |
| 卷号 | 154页码:115326 |
| ISSN号 | 0026-2714 |
| DOI | 10.1016/j.microrel.2024.115326 |
| 文献子类 | Article |
| 电子版国际标准刊号 | 1872-941X |
| WOS记录号 | WOS:001171878200001 |
| 源URL | [https://ir.ihep.ac.cn/handle/311005/305941]  |
| 专题 | 高能物理研究所_东莞分部 |
| 推荐引用方式 GB/T 7714 | Liu, ZH,Huang, XF,Mo, LH,et al. Impact of proton-induced total ionizing dose effects on electrical characteristics and safe operating area of trench field-stop IGBT devices[J]. MICROELECTRONICS RELIABILITY,2024,154:115326. |
| APA | Liu, ZH.,Huang, XF.,Mo, LH.,Hu, ZL.,Lin, M.,...&Wang, HB.(2024).Impact of proton-induced total ionizing dose effects on electrical characteristics and safe operating area of trench field-stop IGBT devices.MICROELECTRONICS RELIABILITY,154,115326. |
| MLA | Liu, ZH,et al."Impact of proton-induced total ionizing dose effects on electrical characteristics and safe operating area of trench field-stop IGBT devices".MICROELECTRONICS RELIABILITY 154(2024):115326. |
入库方式： OAI收割
来源：高能物理研究所
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