Electronic transport in reactively sputtered Mn3GaN films prepared under optimized nitrogen flow
文献类型：期刊论文
| 作者 | Suergers, Christoph; Fischer, Gerda; Deng, Sihao; Hu, Dongmei; Wang, Cong |
| 刊名 | JOURNAL OF PHYSICS-MATERIALS
 |
| 出版日期 | 2024 |
| 卷号 | 7期号:4页码:45004 |
| DOI | 10.1088/2515-7639/ad71f5 |
| 文献子类 | Article |
| 电子版国际标准刊号 | 2515-7639 |
| WOS记录号 | WOS:001308535300001 |
| 源URL | [https://ir.ihep.ac.cn/handle/311005/306765]  |
| 专题 | 高能物理研究所_东莞分部 |
| 推荐引用方式 GB/T 7714 | Suergers, Christoph,Fischer, Gerda,Deng, Sihao,et al. Electronic transport in reactively sputtered Mn3GaN films prepared under optimized nitrogen flow[J]. JOURNAL OF PHYSICS-MATERIALS,2024,7(4):45004. |
| APA | Suergers, Christoph,Fischer, Gerda,Deng, Sihao,Hu, Dongmei,&Wang, Cong.(2024).Electronic transport in reactively sputtered Mn3GaN films prepared under optimized nitrogen flow.JOURNAL OF PHYSICS-MATERIALS,7(4),45004. |
| MLA | Suergers, Christoph,et al."Electronic transport in reactively sputtered Mn3GaN films prepared under optimized nitrogen flow".JOURNAL OF PHYSICS-MATERIALS 7.4(2024):45004. |
入库方式： OAI收割
来源：高能物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。