High oxygen vacancy concentration and improved electrical conductivity in tetragonal LaNbO4 stabilized by Ga and Mo Co-doping on the Nb site
文献类型：期刊论文
| 作者 | Duan, Xiaoxu; Wu, Shuangfeng; Hao, Jiazheng; He, Lunhua; Lou, Chenjie; Tang, Mingxue; Deng, Xia; Lv, Jiasheng; Fang, Jing; Liu, Laijun |
| 刊名 | ACTA MATERIALIA
 |
| 出版日期 | 2024 |
| 卷号 | 280页码:120345 |
| ISSN号 | 1359-6454 |
| DOI | 10.1016/j.actamat.2024.120345 |
| 文献子类 | Article |
| 电子版国际标准刊号 | 1873-2453 |
| WOS记录号 | WOS:001316459300001 |
| 源URL | [https://ir.ihep.ac.cn/handle/311005/306894]  |
| 专题 | 高能物理研究所_东莞分部 |
| 推荐引用方式 GB/T 7714 | Duan, Xiaoxu,Wu, Shuangfeng,Hao, Jiazheng,et al. High oxygen vacancy concentration and improved electrical conductivity in tetragonal LaNbO4 stabilized by Ga and Mo Co-doping on the Nb site[J]. ACTA MATERIALIA,2024,280:120345. |
| APA | Duan, Xiaoxu.,Wu, Shuangfeng.,Hao, Jiazheng.,He, Lunhua.,Lou, Chenjie.,...&Xu, Jungu.(2024).High oxygen vacancy concentration and improved electrical conductivity in tetragonal LaNbO4 stabilized by Ga and Mo Co-doping on the Nb site.ACTA MATERIALIA,280,120345. |
| MLA | Duan, Xiaoxu,et al."High oxygen vacancy concentration and improved electrical conductivity in tetragonal LaNbO4 stabilized by Ga and Mo Co-doping on the Nb site".ACTA MATERIALIA 280(2024):120345. |
入库方式： OAI收割
来源：高能物理研究所
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