1.5-kV AlGaN/GaN MIS-HEMT With 3-D Stacking Pad-Connected Schottky Structure Demonstrating Radiation Robustness Against Atmospheric Neutrons
文献类型：期刊论文
| 作者 | Zhou, Feng; Mo, Lihua; Hu, Zhiliang; Yu, Quanzhi; Zou, Can; Xu, Weizong; Ren, Fangfang; Zhou, Dong; Chen, Dunjun; Zheng, Youdou |
| 刊名 | IEEE ELECTRON DEVICE LETTERS
 |
| 出版日期 | 2024 |
| 卷号 | 45期号:7页码:1129-1132 |
| ISSN号 | 0741-3106 |
| DOI | 10.1109/LED.2024.3403682 |
| 文献子类 | Article |
| 电子版国际标准刊号 | 1558-0563 |
| WOS记录号 | WOS:001259656500028 |
| 源URL | [https://ir.ihep.ac.cn/handle/311005/307382]  |
| 专题 | 高能物理研究所_东莞分部 |
| 推荐引用方式 GB/T 7714 | Zhou, Feng,Mo, Lihua,Hu, Zhiliang,et al. 1.5-kV AlGaN/GaN MIS-HEMT With 3-D Stacking Pad-Connected Schottky Structure Demonstrating Radiation Robustness Against Atmospheric Neutrons[J]. IEEE ELECTRON DEVICE LETTERS,2024,45(7):1129-1132. |
| APA | Zhou, Feng.,Mo, Lihua.,Hu, Zhiliang.,Yu, Quanzhi.,Zou, Can.,...&Lu, Hai.(2024).1.5-kV AlGaN/GaN MIS-HEMT With 3-D Stacking Pad-Connected Schottky Structure Demonstrating Radiation Robustness Against Atmospheric Neutrons.IEEE ELECTRON DEVICE LETTERS,45(7),1129-1132. |
| MLA | Zhou, Feng,et al."1.5-kV AlGaN/GaN MIS-HEMT With 3-D Stacking Pad-Connected Schottky Structure Demonstrating Radiation Robustness Against Atmospheric Neutrons".IEEE ELECTRON DEVICE LETTERS 45.7(2024):1129-1132. |
入库方式： OAI收割
来源：高能物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。