中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页 机构 成果 学者
  
  1. CAS IR Grid
  2. 海洋研究所
  3. 中国科学院海洋研究所
  4. 海洋腐蚀与防护研究发展中心
Interstitial Ag+ Engineering Enables Superior Resistive Switching in Quasi-2D Halide Perovskites

文献类型：期刊论文

作者Qin, Haiyang1,4; Wang, Zijia1,4; Li, Qinrao1,4; Lin, Jianxin1,4,5; Lu, Dongzhu2; Huang, Yicong1,4; Gao, Wenke1,4; Wang, Huachuan1,3,4,5; Bi, Chenghao1,3,4,5
刊名NANOMATERIALS
出版日期2025-08-16
卷号15期号:16页码:13
关键词quasi-2D halide perovskites interstitial engineering memristor neuromorphic devices
DOI10.3390/nano15161267
通讯作者Wang, Huachuan(hcwang@hrbeu.edu.cn) ; Bi, Chenghao(chenghao.bi@hrbeu.edu.cn)
英文摘要Halide perovskite-based memristors are promising neuromorphic devices due to their unique ion migration and interface tunability, yet their conduction mechanisms remain unclear, causing stability and performance issues. Here, we engineer interstitial Ag+ ions within a quasi-two-dimensional (quasi-2D) halide perovskite ((C6H5C2H4NH3)2Csn-1PbnI3n+1) to enhance device stability and controllability. The introduced Ag+ ions occupy organic interlayers, forming thermodynamically stable structures and introducing deep-level energy states without structural distortion, which do not act as non-radiative recombination centers, but instead serve as efficient charge trapping centers that stabilize intermediate resistance states and facilitate controlled filament evolution during resistive switching. This modification also leads to enhanced electron transparency near the Fermi level, contributing to improved charge transport dynamics and device performance. Under external electric fields, these Ag+ ions act as mobile ionic species, facilitating controlled filament formation and stable resistive switching. The resulting devices demonstrate exceptional performance, featuring an ultrahigh on/off ratio (similar to 108) and low operating voltages (similar to 0.31 V), surpassing existing benchmarks. Our findings highlight the dual role of Ag+ ions in structural stabilization and conduction modulation, providing a robust approach for high-performance perovskite memristor engineering.
WOS关键词EFFICIENT
资助项目National Natural Science Foundation of China ; Shandong Provincial Natural Science Foundation[ZR2023QF005] ; Heilongjiang Provincial Natural Science Foundation of China[LH2023F026] ; Hainan Provincial Natural Science Foundation of China[525QN382] ; Hainan Provincial Natural Science Foundation of China[525QN379] ; New Era Longjiang Excellent Doctoral Dissertation Project[LJYXL2022-003] ; Youth Innovation and Technology Support Program for Colleges of Shandong Province[2024KJH050] ; Fundamental Research Funds for the Central Universities[3072024XX2606] ; Fundamental Research Funds for the Central Universities[3072025YC0401] ; Fundamental Research Funds for the Central Universities[3072025YC0402] ; Fundamental Research Funds for the Central Universities[79000012/012] ; Teaching Reform Research Project of Harbin Engineering University[79005023/013] ; [52302171]
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种英语
WOS记录号WOS:001558128600001
出版者MDPI
源URL[http://ir.qdio.ac.cn/handle/337002/203227]  
专题海洋研究所_海洋腐蚀与防护研究发展中心
通讯作者Wang, Huachuan; Bi, Chenghao
作者单位1.Harbin Engn Univ, Coll Intelligent Syst Sci & Engn, Harbin 150001, Peoples R China
2.Chinese Acad Sci, Inst Oceanol, State Key Lab Adv Marine Mat, Key Lab Marine Environm Corros & Biofouling, Qingdao 266000, Peoples R China
3.Harbin Engn Univ, Yantai Res Inst, Yantai 264000, Peoples R China
4.Harbin Engn Univ, Qingdao Innovat & Dev Ctr, Qingdao 266500, Peoples R China
5.Harbin Engn Univ, Sanya Nanhai Innovat & Dev Base Harbin Engn Univ, Sanya 572024, Peoples R China
推荐引用方式
GB/T 7714		 Qin, Haiyang,Wang, Zijia,Li, Qinrao,et al. Interstitial Ag+ Engineering Enables Superior Resistive Switching in Quasi-2D Halide Perovskites[J]. NANOMATERIALS,2025,15(16):13.
APA Qin, Haiyang.,Wang, Zijia.,Li, Qinrao.,Lin, Jianxin.,Lu, Dongzhu.,...&Bi, Chenghao.(2025).Interstitial Ag+ Engineering Enables Superior Resistive Switching in Quasi-2D Halide Perovskites.NANOMATERIALS,15(16),13.
MLA Qin, Haiyang,et al."Interstitial Ag+ Engineering Enables Superior Resistive Switching in Quasi-2D Halide Perovskites".NANOMATERIALS 15.16(2025):13.

入库方式： OAI收割

来源：海洋研究所

浏览0
下载0
收藏0
其他版本

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。