中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Phononic origin of the infrared dielectric properties of RE2O3 (RE = Y, Gd, Ho, Lu) compounds

文献类型:期刊论文

作者Luo,Yixiu1; Wang,Juan1,2; Sun,Luchao1; Wang,Jingyang1
刊名Modelling and Simulation in Materials Science and Engineering
出版日期2024-05-13
卷号32期号:5
关键词infrared phonon first-principles sesquioxides
ISSN号0965-0393
DOI10.1088/1361-651X/ad461e
通讯作者Luo,Yixiu() ; Wang,Jingyang()
英文摘要Abstract Understanding the phononic origin of the infrared (IR) dielectric properties of yttria (Y2O3) and other rare-earth sesquioxides (RE2O3) is a fundamental task in the search of appropriate RE2O3 materials that serve particular IR optical applications. We herein investigate the IR dielectric properties of RE2O3 (RE = Y, Gd, Ho, Lu) using density functional theory-based phonon calculations and Lorentz oscillator model. The abundant IR-active optical phonon modes that are available for effective absorption of photons result in high reflectance of RE2O3, among which four IR-active modes originated from large distortions of REO6 octahedra are found to contribute dominantly to the phonon dielectric constants. Particularly, the present calculation method by considering one-phonon absorption process is demonstrated with good reliability in predicting the IR dielectric parameters of RE2O3 at the far-IR as well as the vicinity of mid-IR region, and the potential cutoff frequency/wavelength of its applicability is disclosed as characterized by the maximum frequency of IR-active longitudinal phonon modes. The results deepen the understanding on IR dielectric properties of RE2O3, and aid the computational design of materials with appropriate IR properties.
语种英语
WOS记录号IOP:MSMS_32_5_055009
出版者IOP Publishing
源URL  
专题金属研究所_中国科学院金属研究所
通讯作者Luo,Yixiu; Wang,Jingyang
作者单位1.Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, People’s Republic of China
2.School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, People’s Republic of China
推荐引用方式
GB/T 7714
Luo,Yixiu,Wang,Juan,Sun,Luchao,et al. Phononic origin of the infrared dielectric properties of RE2O3 (RE = Y, Gd, Ho, Lu) compounds[J]. Modelling and Simulation in Materials Science and Engineering,2024,32(5).
APA Luo,Yixiu,Wang,Juan,Sun,Luchao,&Wang,Jingyang.(2024).Phononic origin of the infrared dielectric properties of RE2O3 (RE = Y, Gd, Ho, Lu) compounds.Modelling and Simulation in Materials Science and Engineering,32(5).
MLA Luo,Yixiu,et al."Phononic origin of the infrared dielectric properties of RE2O3 (RE = Y, Gd, Ho, Lu) compounds".Modelling and Simulation in Materials Science and Engineering 32.5(2024).

入库方式: OAI收割

来源:金属研究所

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