Interface Element Accumulation-Induced Single Ferroelectric Domain for High-Performance Neuromorphic Synapse
文献类型：期刊论文
| 作者 | Li, Xiaoqi1,2; Liu, Jiaqi1,2; Xu, Fan3; Ali, Sajjad4; Wu, Han1,2; Huang, Biaohong1; Deng, Haoyue5,6; Li, Yizhuo1; Jiang, Yuxuan1,2; Fan, Zhen5,6 |
| 刊名 | ADVANCED FUNCTIONAL MATERIALS
 |
| 出版日期 | 2025-02-19 |
| 页码 | 12 |
| 关键词 | BaTiO3 ferroelectric synapse neuromorphic computing oxygen vacancy single domain Sr diffusion |
| ISSN号 | 1616-301X |
| DOI | 10.1002/adfm.202423225 |
| 通讯作者 | Hu, Weijin(wjhu@imr.ac.cn) |
| 英文摘要 | Ferroelectric (FE) synapses are promising for neuromorphic computing toward enhanced artificial intelligence systems. Nonetheless, there is a significant gap in understanding how to effectively tailor self-polarization and its implications on synaptic device performance. Here, an approach using interfacial element accumulation is reported to tailor the self-polarization states of BaTiO3 (BTO)/La0.67Sr0.33MnO3 (LSMO) FE heterostructure into a single domain state. This single domain configuration results are demonstrated in a gradient distribution of oxygen vacancies across the film thickness, yielding an extraordinary on/off ratio of 10(7) in Pt/BTO/LSMO FE diodes. This giant resistive switching enables the long-term potentiation and long-term depression synaptic functions of excellent linearity and symmetry (with a nonsymmetry factor as low as 0.1), leading to a supervised learning ability of the associated artificial neural network with a high pattern recognition accuracy of 95%. This work provides a simple design principle for FE single domain, which is substantial in enhancing the performance of FE synapses for neuromorphic computing. |
| 资助项目 | National Key R&D Program of China[2022YFA1203903] ; National Natural Science Foundation of China (NSFC)[92477120] ; National Natural Science Foundation of China (NSFC)[61974147] ; National Natural Science Foundation of China (NSFC)[52031014] ; National Natural Science Foundation of China (NSFC)[52122101] ; International Partnership Program of Chinese Academy of Sciences[172GJHZ2024044MI] ; Special Fund for Central Government Guiding the Local Development of Science and Technology[2023JH6/100100063] ; Youth Innovation Promotion Association CAS (Youth Innovation Promotion Association of the Chinese Academy of Sciences)[2021187] ; Youth Innovation Promotion Association CAS (Youth Innovation Promotion Association of the Chinese Academy of Sciences)[Y202048] ; Prince Sultan University |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:001426358900001 |
| 出版者 | WILEY-V C H VERLAG GMBH |
| 资助机构 | National Key R&D Program of China ; National Natural Science Foundation of China (NSFC) ; International Partnership Program of Chinese Academy of Sciences ; Special Fund for Central Government Guiding the Local Development of Science and Technology ; Youth Innovation Promotion Association CAS (Youth Innovation Promotion Association of the Chinese Academy of Sciences) ; Prince Sultan University |
| 源URL |  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Hu, Weijin |
| 作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, IMR,CAS, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 3.China Special Equipment Inspect & Res Inst, Beijing 100029, Peoples R China 4.Prince Sultan Univ, Coll Humanities & Sci, Energy Water & Environm Lab, Riyadh 11586, Saudi Arabia 5.South China Normal Univ, Inst Adv Mat, Guangzhou 510006, Peoples R China 6.South China Normal Univ, South China Acad Adv Optoelect, Guangdong Prov Key Lab Opt Informat Mat & Technol, Guangzhou 510006, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, Xiaoqi,Liu, Jiaqi,Xu, Fan,et al. Interface Element Accumulation-Induced Single Ferroelectric Domain for High-Performance Neuromorphic Synapse[J]. ADVANCED FUNCTIONAL MATERIALS,2025:12. |
| APA | Li, Xiaoqi.,Liu, Jiaqi.,Xu, Fan.,Ali, Sajjad.,Wu, Han.,...&Zhang, Zhidong.(2025).Interface Element Accumulation-Induced Single Ferroelectric Domain for High-Performance Neuromorphic Synapse.ADVANCED FUNCTIONAL MATERIALS,12. |
| MLA | Li, Xiaoqi,et al."Interface Element Accumulation-Induced Single Ferroelectric Domain for High-Performance Neuromorphic Synapse".ADVANCED FUNCTIONAL MATERIALS (2025):12. |
入库方式： OAI收割
来源：金属研究所
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