Annealing-induced improvement in thermal conductivity of Si3N4 specimens produced by vat photopolymerization: A comparative study of vat photopolymerization and cold isostatic pressing
文献类型：期刊论文
| 作者 | Zhang, Chi1; Wang, Ning1; Chang, Hai1; Wu, Yingna1; Yang, Rui1,2; Yao, Dongxu3; Zhai, Zirong1 |
| 刊名 | CERAMICS INTERNATIONAL
 |
| 出版日期 | 2025 |
| 卷号 | 51期号:3页码:4011-4022 |
| 关键词 | Vat photopolymerization Cold isostatic pressing Thermal conductivity Annealing Sintering process |
| ISSN号 | 0272-8842 |
| DOI | 10.1016/j.ceramint.2024.11.380 |
| 通讯作者 | Yao, Dongxu(yaodongxu@mail.sic.ac.cn) ; Zhai, Zirong(zhaizr@shanghaitech.edu.cn) |
| 英文摘要 | This study addresses challenges in manufacturing high-quality silicon nitride (Si3N4) products using vat photopolymerization (VPP), a method that enables highly precise and complex manufacturing that was previously unachievable. A comparison of VPP and cold isostatic pressing (CIP) showed that the intergranular phases of VPP samples exhibited continuous network assembly, while the intergranular phases of CIP samples were dispersed and aggregated. For densification, VPP samples required more aggressive sintering conditions and a higher MgO content. This prolonged densification process adversely affected thermal conductivity, only reaching a maximum of 70.91 W m- 1 center dot K- 1. Through annealing, thermal conductivity of VPP sample improved by 72.44 %, narrowing the gap with CIP sample (90.28 W m- 1 center dot K- 1) and reaching up to 96.20 W m- 1 center dot K- 1. Si3N4 sample exhibiting high flexural strength of 908.28 f 46.90 MPa were prepared using VPP. This study proposes a viable approach for producing high-performance Si3N4 heat exchangers and other complex devices via VPP. |
| 资助项目 | National Key R & D Program of China[2022YFB3706302] ; Double First- Class Initiative Fund ; ShanghaiTech University |
| WOS研究方向 | Materials Science |
| 语种 | 英语 |
| WOS记录号 | WOS:001409641300001 |
| 出版者 | ELSEVIER SCI LTD |
| 资助机构 | National Key R & D Program of China ; Double First- Class Initiative Fund ; ShanghaiTech University |
| 源URL |  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Yao, Dongxu; Zhai, Zirong |
| 作者单位 | 1.ShanghaiTech Univ, Ctr Adapt Syst Engn, 393 Huaxia Middle Rd, Shanghai 201210, Peoples R China 2.Chinese Acad Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China 3.Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine M, Shanghai 200050, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, Chi,Wang, Ning,Chang, Hai,et al. Annealing-induced improvement in thermal conductivity of Si3N4 specimens produced by vat photopolymerization: A comparative study of vat photopolymerization and cold isostatic pressing[J]. CERAMICS INTERNATIONAL,2025,51(3):4011-4022. |
| APA | Zhang, Chi.,Wang, Ning.,Chang, Hai.,Wu, Yingna.,Yang, Rui.,...&Zhai, Zirong.(2025).Annealing-induced improvement in thermal conductivity of Si3N4 specimens produced by vat photopolymerization: A comparative study of vat photopolymerization and cold isostatic pressing.CERAMICS INTERNATIONAL,51(3),4011-4022. |
| MLA | Zhang, Chi,et al."Annealing-induced improvement in thermal conductivity of Si3N4 specimens produced by vat photopolymerization: A comparative study of vat photopolymerization and cold isostatic pressing".CERAMICS INTERNATIONAL 51.3(2025):4011-4022. |
入库方式： OAI收割
来源：金属研究所
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