Photoelectric characteristic of single-phase InxGa1-xN films with tunable bandgap through RF magnetron sputtering (vol 59, pg 21828, 2024)
文献类型：期刊论文
| 作者 | Li, Ziyuan1; Shen, Longhai1; Zhou, Ouxiang1; Zhu, Xiaotian2; Zhang, Yu1; Wang, Quhui1; Qi, Dongli1; Zhang, Xinglai1; Han, Mengyao1; Xu, Junhao1 |
| 刊名 | JOURNAL OF MATERIALS SCIENCE
 |
| 出版日期 | 2025 |
| 卷号 | 60期号:4页码:2165-2167 |
| ISSN号 | 0022-2461 |
| DOI | 10.1007/s10853-024-10575-x |
| 通讯作者 | Shen, Longhai(shenlonghai@163.com) |
| WOS研究方向 | Materials Science |
| 语种 | 英语 |
| WOS记录号 | WOS:001391137800001 |
| 出版者 | SPRINGER |
| 源URL |  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Shen, Longhai |
| 作者单位 | 1.Shenyang Ligong Univ, Sch Sci, Shenyang 110159, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, Ziyuan,Shen, Longhai,Zhou, Ouxiang,et al. Photoelectric characteristic of single-phase InxGa1-xN films with tunable bandgap through RF magnetron sputtering (vol 59, pg 21828, 2024)[J]. JOURNAL OF MATERIALS SCIENCE,2025,60(4):2165-2167. |
| APA | Li, Ziyuan.,Shen, Longhai.,Zhou, Ouxiang.,Zhu, Xiaotian.,Zhang, Yu.,...&Li, Yuhao.(2025).Photoelectric characteristic of single-phase InxGa1-xN films with tunable bandgap through RF magnetron sputtering (vol 59, pg 21828, 2024).JOURNAL OF MATERIALS SCIENCE,60(4),2165-2167. |
| MLA | Li, Ziyuan,et al."Photoelectric characteristic of single-phase InxGa1-xN films with tunable bandgap through RF magnetron sputtering (vol 59, pg 21828, 2024)".JOURNAL OF MATERIALS SCIENCE 60.4(2025):2165-2167. |
入库方式： OAI收割
来源：金属研究所
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