Enhanced surface transport properties of high-quality ultrathin epitaxial Bi2Te3 films
文献类型：期刊论文
| 作者 | Gao, Jian1,2; Shi, Xudong1,2; Li, Tingting1,2; Wang, Zhiyu1,2; Li, Mingze1,2; Gao, Xuan P. A.3; Wang, Zhenhua1,2; Zhang, Zhidong1 |
| 刊名 | JOURNAL OF MATERIALS SCIENCE
 |
| 出版日期 | 2025-01-15 |
| 页码 | 11 |
| ISSN号 | 0022-2461 |
| DOI | 10.1007/s10853-025-10613-2 |
| 通讯作者 | Li, Mingze(mzli14s@imr.ac.cn) ; Wang, Zhenhua(zhwang@imr.ac.cn) |
| 英文摘要 | The topological surface states (TSS) of 3D topological insulators (TI) play a crucial role in their transport. How to avoid intrinsic defects in materials and thus increase the proportion of surface states in the transport process poses a great challenge to materials scientists. In our work, high-quality epitaxial topological insulator Bi2Te3 ultrathin films with flat surface were prepared by pulsed laser deposition (PLD). The insulating resistivity-temperature (rho-T) curve in Bi2(TexSe1-x)3 films with optimal doping concentration (25-35%) shows the transport of bulk state caused by intrinsic defects which is gradually suppressed. In thinner Bi2Te3 films, the rho-T curve displays a transition from negative to positive slope at higher temperatures, which is attributed to enhanced electron-electron interaction (EEI). The transition from a parabolic to a linear to a weak anti-localization (WAL) was observed in the magnetoresistance (MR) results of pure Bi2Te3 ultrathin films with different thicknesses. By comparing the MR of Bi2(TexSe1-x)3 films with different Se doping concentrations, it is found that the MR of the Se-doped films and the WAL near the zero magnetic field are obvious, and the change is greatest at the optimal doping concentration. The magnetoconductivity (MC) data Delta G can be fitted well by the quantum interference model Hikami, Larkin, and Nagaoka (HLN) equation at magnetic fields as high as +/- 7 T. This provides guidance for further research on how to enhance the TSS transport of 3D TIs. |
| 资助项目 | National Natural Science Foundation of China[52371204] ; National Natural Science Foundation of China[52201233] ; National Natural Science Foundation of China[52031014] ; National Natural Science Foundation of China |
| WOS研究方向 | Materials Science |
| 语种 | 英语 |
| WOS记录号 | WOS:001396196100001 |
| 出版者 | SPRINGER |
| 资助机构 | National Natural Science Foundation of China ; National Natural Science Foundation of China |
| 源URL |  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Li, Mingze; Wang, Zhenhua |
| 作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Peoples R China 3.Case Western Reserve Univ, Dept Phys, Cleveland Hts, OH 44106 USA |
| 推荐引用方式 GB/T 7714 | Gao, Jian,Shi, Xudong,Li, Tingting,et al. Enhanced surface transport properties of high-quality ultrathin epitaxial Bi2Te3 films[J]. JOURNAL OF MATERIALS SCIENCE,2025:11. |
| APA | Gao, Jian.,Shi, Xudong.,Li, Tingting.,Wang, Zhiyu.,Li, Mingze.,...&Zhang, Zhidong.(2025).Enhanced surface transport properties of high-quality ultrathin epitaxial Bi2Te3 films.JOURNAL OF MATERIALS SCIENCE,11. |
| MLA | Gao, Jian,et al."Enhanced surface transport properties of high-quality ultrathin epitaxial Bi2Te3 films".JOURNAL OF MATERIALS SCIENCE (2025):11. |
入库方式： OAI收割
来源：金属研究所
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