Tunable in-plane conductance anisotropy in 2D semiconductive AgCrP2S6 by ion-electron co-modulations
文献类型：期刊论文
| 作者 | Sun, Yujie1,2; Zhang, Rongjie1,2; Tan, Junyang1,2; Zeng, Shengfeng1,2; Li, Shengnan1,2; Wei, Qiang1,2; Zhang, Zhi-Yuan1,2; Zhao, Shilong3; Zou, Xiaolong1,2; Liu, Bilu1,2 |
| 刊名 | SCIENCE ADVANCES
 |
| 出版日期 | 2025-01-08 |
| 卷号 | 11期号:2页码:7 |
| ISSN号 | 2375-2548 |
| DOI | 10.1126/sciadv.adr3105 |
| 通讯作者 | Liu, Bilu(bilu.liu@sz.tsinghua.edu.cn) ; Cheng, Hui-Ming(cheng@imr.ac.cn) |
| 英文摘要 | In-plane anisotropic two-dimensional (2D) semiconductors have gained much interest due to their anisotropic properties, which opens avenues in designing functional electronics. Currently reported in-plane anisotropic semiconductors mainly rely on crystal lattice anisotropy. Herein, AgCrP2S6 (ACPS) is introduced as a promising member to the anisotropic 2D semiconductors, in which, both crystal structure and ion-electron co-modulations are used to achieve tunable in-plane conductance anisotropy. Scanning tunneling electron microscopy and polarized Raman spectroscopy show the structural anisotropy of ACPS. Electrical transport measurements show that its tunable in-plane conductance anisotropy is related to the ion-electron co-modulations, where Ag ion migration is anisotropic along a axis and b axis. Electrical transport measurements show the semiconducting properties of ACPS, as also supported by photoluminescence results. Moreover, the transfer curves of ACPS showcase large Vg-related hysteresis, which is directionally controlled by anisotropic Ag ion migration. This work offers a possibility of using anisotropic charge transport in functional electronics by ion-electron co-modulations. |
| 资助项目 | National Science Foundation of china |
| WOS研究方向 | Science & Technology - Other Topics |
| 语种 | 英语 |
| WOS记录号 | WOS:001392723500028 |
| 出版者 | AMER ASSOC ADVANCEMENT SCIENCE |
| 资助机构 | National Science Foundation of china |
| 源URL |  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Liu, Bilu; Cheng, Hui-Ming |
| 作者单位 | 1.Tsinghua Univ, Tsinghua Berkeley Shenzhen Inst, Shenzhen Geim Graphene Ctr, Shenzhen Key Lab Adv Layered Mat Value Added Appli, Shenzhen 518055, Peoples R China 2.Tsinghua Univ, Inst Mat Res, Tsinghua Shenzhen Int Grad Sch, Shenzhen 518055, Peoples R China 3.Foshan Univ, Sch Elect & Informat Engn, Foshan 528000, Peoples R China 4.Chinese Acad Sci, Shenzhen Inst Adv Technol, Inst Technol Carbon Neutral, Shenzhen 518055, Peoples R China 5.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China |
| 推荐引用方式 GB/T 7714 | Sun, Yujie,Zhang, Rongjie,Tan, Junyang,et al. Tunable in-plane conductance anisotropy in 2D semiconductive AgCrP2S6 by ion-electron co-modulations[J]. SCIENCE ADVANCES,2025,11(2):7. |
| APA | Sun, Yujie.,Zhang, Rongjie.,Tan, Junyang.,Zeng, Shengfeng.,Li, Shengnan.,...&Cheng, Hui-Ming.(2025).Tunable in-plane conductance anisotropy in 2D semiconductive AgCrP2S6 by ion-electron co-modulations.SCIENCE ADVANCES,11(2),7. |
| MLA | Sun, Yujie,et al."Tunable in-plane conductance anisotropy in 2D semiconductive AgCrP2S6 by ion-electron co-modulations".SCIENCE ADVANCES 11.2(2025):7. |
入库方式： OAI收割
来源：金属研究所
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