中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Reversible Manipulation of Polar Topologies in Oxide Ferroelectrics via Electric Fields

文献类型:期刊论文

作者Feng, Yan-Peng1,2; Wu, Han3,4; Zhu, Yin-Lian1,2,5; Wang, Yu-Jia3,4; Tang, Yun-Long3,4; Ma, Xiu-Liang1,2,6,7
刊名ADVANCED MATERIALS
出版日期2024-12-17
页码10
关键词external stimuli ferroelectric thin films in situ transmission electron microscopy reversible transition topological domains
ISSN号0935-9648
DOI10.1002/adma.202414346
通讯作者Zhu, Yin-Lian(zhuyinlian@sslab.org.cn) ; Ma, Xiu-Liang(xlma@iphy.ac.cn)
英文摘要Polar topologies show great potentials in memories and other nano-micro devices. To integrate with silicon conducting circuits, it is vital to understand the dynamic evolution and the transformation of different domain configurations under external stimulus. Here in situ transmission electron microscopy is performed and the electrically controlled creation and annihilation of large-scale polar flux-closure array from typical c/a domains in PbTiO3/SrTiO3 bilayers is directly observed. It is found that the transformation is reversible after removal of external electric fields. Increasing external electric fields on (PbTiO3/SrTiO3)5 multilayered films, it is further found that the flux-closure domains are nucleated and propagated via the steps of first the formation of new c domains and then connection with neighboring c domains. The transition from a/c domains to flux-closure arrays under electric fields is collaborated with evaluating energy variations by phase-field simulations in which the electrostatic energy plays an important role. These results demonstrate the polar topologies can be reversibly manipulated by external stimuli, which sheds light on further understanding the dynamics behavior of polar topologies and helps for future nanoelectric applications.
资助项目Institute of Metal Research, Chinese Academy of Sciences[2023A1515011058] ; Guangdong Basic and Applied Basic Research Foundation[GDZX2202001] ; Guangdong Basic and Applied Basic Research Foundation[GDZX2302001] ; Guangdong Provincial Quantum Science Strategic Initiative[52122101] ; Guangdong Provincial Quantum Science Strategic Initiative[52471022] ; Guangdong Provincial Quantum Science Strategic Initiative[51971223] ; National Natural Science Foundation of China[2021187] ; Youth Innovation Promotion Association CAS[2024-ZD01] ; IMR Innovation Fund
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种英语
WOS记录号WOS:001379003500001
出版者WILEY-V C H VERLAG GMBH
资助机构Institute of Metal Research, Chinese Academy of Sciences ; Guangdong Basic and Applied Basic Research Foundation ; Guangdong Provincial Quantum Science Strategic Initiative ; National Natural Science Foundation of China ; Youth Innovation Promotion Association CAS ; IMR Innovation Fund
源URL  
专题金属研究所_中国科学院金属研究所
通讯作者Zhu, Yin-Lian; Ma, Xiu-Liang
作者单位1.Bay Area Ctr Electron Microscopy, Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China
2.Quantum Sci Ctr Guangdong HongKong, Macao Greater Bay Area, Shenzhen 518048, Peoples R China
3.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Wenhua Rd 72, Shenyang 110016, Peoples R China
4.Univ Sci & Technol China, Sch Mat Sci & Engn, Wenhua Rd 72, Shenyang 110016, Peoples R China
5.Hunan Univ Sci & Technol, Sch Mat Sci & Engn, Xiangtan 411201, Peoples R China
6.Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
7.Lanzhou Univ Technol, State Key Lab Adv Proc & Recycling Nonferrous Met, Lanzhou 730050, Peoples R China
推荐引用方式
GB/T 7714
Feng, Yan-Peng,Wu, Han,Zhu, Yin-Lian,et al. Reversible Manipulation of Polar Topologies in Oxide Ferroelectrics via Electric Fields[J]. ADVANCED MATERIALS,2024:10.
APA Feng, Yan-Peng,Wu, Han,Zhu, Yin-Lian,Wang, Yu-Jia,Tang, Yun-Long,&Ma, Xiu-Liang.(2024).Reversible Manipulation of Polar Topologies in Oxide Ferroelectrics via Electric Fields.ADVANCED MATERIALS,10.
MLA Feng, Yan-Peng,et al."Reversible Manipulation of Polar Topologies in Oxide Ferroelectrics via Electric Fields".ADVANCED MATERIALS (2024):10.

入库方式: OAI收割

来源:金属研究所

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