Growth mechanism and product formation of Micro-arc oxide film layers on aluminum matrix composites: An analytical experimental and computational simulation study
文献类型：期刊论文
| 作者 | Ma, Guofeng1; Li, Zhanpeng1,2; Zhao, Xiaorong1; Wang, Ziyao1; Sun, Shineng1; Yang, Yanhong3; Sun, Yuan3; Wang, Shiyang3; Ren, Shengtao2; Kou, Ronghui2 |
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 2025-03-01 |
| 卷号 | 684页码:12 |
| 关键词 | Micro-arc oxidation Density functional theory Growth mechanism 17% SiCp/ 2009 AMC |
| ISSN号 | 0169-4332 |
| DOI | 10.1016/j.apsusc.2024.161968 |
| 通讯作者 | Ma, Guofeng(guofma@163.com) ; Kou, Ronghui(rhkou@syu.edu.cn) |
| 英文摘要 | s: The present study elucidates the formation mechanism of Micro-arc oxidation film through a theoretical model that harmoniously integrates Micro-arc oxidation technology with density functional theory. XRD, EDS, and XPS analyses were conducted to ascertain the elemental composition and phase structure of the film layer products. Subsequently, based on the first principles of density functional theory, the phases involved in the film-forming reaction mechanism of the Micro-arc oxidized ceramic film were simulated, calculated, and analyzed. Ultimately confirming the reaction process products. The simulations exhibited a high degree of congruence with the experimental findings. The results indicate that during the Micro-arc oxidation reaction phase, O2 initially forms an Al2O3 passivation layer with the substrate. Subsequently, under conditions of high voltage and temperature, O2 reacts with SiC to produce SiO2 and CO2. When Ce(NO3)3 & sdot;6 H2O was introduced into the electrolyte, Ce3+ generates Ce(OH)3, CeO2, and Ce2O3 during the MAO process. Ultimately, CeO2 and SiO2 combine to form a stable composite oxide, CeO2 & sdot;SiO2. By computing the interfacial energy of each product, it was determined that the matrix preferentially establishes a stable contact with gamma-Al2O3. Through a combination of experimental and computational simulations, the generation mechanism of the Micro-arc oxidation reaction products has been deduced. |
| 资助项目 | Innovative Talents Program of Colleges and Universities in Liaoning Province[2020-42] ; Shenyang Science and Technology Project[20-202-1-12] ; Shenyang Science and Technology Project[23-407-3-11] ; Shenyang Science and Technology Innovation Talent Project[RC210321] ; National Defence Key Discipline Laboratory of Light Alloy Processing Science and Technology, Nanchang Hangkong University[EG202380297] |
| WOS研究方向 | Chemistry ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:001372897100001 |
| 出版者 | ELSEVIER |
| 资助机构 | Innovative Talents Program of Colleges and Universities in Liaoning Province ; Shenyang Science and Technology Project ; Shenyang Science and Technology Innovation Talent Project ; National Defence Key Discipline Laboratory of Light Alloy Processing Science and Technology, Nanchang Hangkong University |
| 源URL |  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Ma, Guofeng; Kou, Ronghui |
| 作者单位 | 1.Shenyang Univ, Shenyang Key Lab Microarc Oxidat Technol & Applica, Shenyang 110044, Peoples R China 2.Shenyang Univ, Sch Mech Engn, Shenyang 110044, Peoples R China 3.Chinese Acad Sci, Inst Met Res, Shi changxu Innovat Ctr Adv Mat, Shenyang 110016, Liaoning, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ma, Guofeng,Li, Zhanpeng,Zhao, Xiaorong,et al. Growth mechanism and product formation of Micro-arc oxide film layers on aluminum matrix composites: An analytical experimental and computational simulation study[J]. APPLIED SURFACE SCIENCE,2025,684:12. |
| APA | Ma, Guofeng.,Li, Zhanpeng.,Zhao, Xiaorong.,Wang, Ziyao.,Sun, Shineng.,...&Kou, Ronghui.(2025).Growth mechanism and product formation of Micro-arc oxide film layers on aluminum matrix composites: An analytical experimental and computational simulation study.APPLIED SURFACE SCIENCE,684,12. |
| MLA | Ma, Guofeng,et al."Growth mechanism and product formation of Micro-arc oxide film layers on aluminum matrix composites: An analytical experimental and computational simulation study".APPLIED SURFACE SCIENCE 684(2025):12. |
入库方式： OAI收割
来源：金属研究所
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