Effect of film thickness on phase structure of epitaxial non-doped hafnium oxide films
文献类型：期刊论文
| 作者 | He, Mengdi1,2; Yao, Tingting1,2; Yan, Xuexi1,2; Qiao, Beibei1,2; Qian, Zhen1,2; Jiang, Yixiao1,2; Tian, Min3; Yang, Zhiqing3; Chen, Chunlin1,2 |
| 刊名 | MICRON
 |
| 出版日期 | 2025-03-01 |
| 卷号 | 190页码:8 |
| 关键词 | Hafnium oxide Thin film Pulsed laser deposition Orthorhombic phase Transmission electron microscopy |
| ISSN号 | 0968-4328 |
| DOI | 10.1016/j.micron.2024.103762 |
| 通讯作者 | Yao, Tingting(ttyao11s@imr.ac.cn) ; Chen, Chunlin(clchen@imr.ac.cn) |
| 英文摘要 | HfO2 has been widely used in the electronics industry as a dielectric material with excellent properties. It has attracted much attention since HfO2 was first reported to be ferroelectric in 2011. With the continuous advancement of research, various methods such as oxygen vacancy control and interface control have been proven to be able to stabilize the metastable polar o-phase structure in doped hafnium oxide thin films. However, there are still some shortcomings in the relevant issues concerning non-doped hafnium oxide thin film materials. Here, polycrystalline non-doped HfO2 thin films were grown on SrTiO3 substrates by pulsed laser deposition (PLD). Atomic force microscopy investigation suggests that the surface roughness of HfO2 thin films increases as the film thickness increases. X-ray photoelectron spectroscopy analyses indicate that the HfO2 thin film has a high purity and contain only Hf4+ ions. The band gap of HfO2 was measured by valence EELS and UV-visible spectra. Atomic structures of the HfO2/SrTiO3 heterointerface have been studied by the aberration-corrected transmission electron microscopy and energy-dispersive X-ray spectroscopy. The HfO2/SrTiO3 heterointerface is atomically abrupt and incoherent. Our findings suggest that non-doped HfO2 films with o-phase structure through PLD technology. |
| 资助项目 | National Natural Science Foundation of China[52125101] ; National Natural Science Foundation of China[52271015] ; Ji Hua Lab-oratory Project[X210141TL210] ; Guangdong Major Project of Basic Research[2021B0301030003] |
| WOS研究方向 | Microscopy |
| 语种 | 英语 |
| WOS记录号 | WOS:001375747800001 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| 资助机构 | National Natural Science Foundation of China ; Ji Hua Lab-oratory Project ; Guangdong Major Project of Basic Research |
| 源URL |  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Yao, Tingting; Chen, Chunlin |
| 作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 3.Jihua Lab, Foshan 528251, Peoples R China |
| 推荐引用方式 GB/T 7714 | He, Mengdi,Yao, Tingting,Yan, Xuexi,et al. Effect of film thickness on phase structure of epitaxial non-doped hafnium oxide films[J]. MICRON,2025,190:8. |
| APA | He, Mengdi.,Yao, Tingting.,Yan, Xuexi.,Qiao, Beibei.,Qian, Zhen.,...&Chen, Chunlin.(2025).Effect of film thickness on phase structure of epitaxial non-doped hafnium oxide films.MICRON,190,8. |
| MLA | He, Mengdi,et al."Effect of film thickness on phase structure of epitaxial non-doped hafnium oxide films".MICRON 190(2025):8. |
入库方式： OAI收割
来源：金属研究所
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