Enhanced Exchange Bias in Epitaxial High-Entropy Oxide Heterostructures
文献类型：期刊论文
| 作者 | Wang, Hailin1; Huang, Haoliang2,3,4; Feng, Yanpeng5; Ku, Yu-Chieh6; Liu, Cheng-En6; Chen, Shanquan1; Farhan, Alan7; Piamonteze, Cinthia8; Lu, Yalin2,3; Tang, Yunlong9 |
| 刊名 | ACS APPLIED MATERIALS & INTERFACES
 |
| 出版日期 | 2023-12-07 |
| 卷号 | 15期号:50页码:58643-58650 |
| 关键词 | high-entropy oxides exchange bias effect perovskite oxide epitaxial films heterostructures |
| ISSN号 | 1944-8244 |
| DOI | 10.1021/acsami.3c14943 |
| 通讯作者 | Kuo, Chang-Yang(changyangkuo@nycu.edu.tw) ; Chen, Zuhuang(zuhuang@hit.edu.cn) |
| 英文摘要 | High-entropy oxides (HEOs) have gained significant interest in recent years due to their unique structural characteristics and potential to tailor functional properties. However, the electronic structure of the HEOs currently remains vastly unknown. In this work, combining magnetometry measurements, scanning transmission electron microscopy, and element-specific X-ray absorption spectroscopy, the electronic structure and magnetic properties of the perovskite-HEO La(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O-3 epitaxial thin films are systemically studied. It is found that enhanced magnetic frustration emerges from competing exchange interactions of the five transition-metal cations with energetically favorable half-filled/full-filled electron configurations, resulting in an unprecedented large vertical exchange bias effect in the single-crystalline films. Furthermore, our findings demonstrate that the La(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O-3 layer with a thickness down to 1 nm can be used as a pinning layer and strongly coupled with a ferromagnetic La0.7Sr0.3MnO3 layer, leading to a notable exchange bias and coercivity enhancement in a cooling field as small as 5 Oe. Our studies not only provide invaluable insight into the electronic structure of HEOs but also pave the way for a new era of large bias materials for spintronics devices. |
| 资助项目 | Ministry of Science and Technology, Taiwan[2020B1515020029] ; Guangdong Basic and Applied Basic Research Foundation[JCYJ20200109112829287] ; Shenzhen Science and Technology Innovation project[KQTD20200820113045083] ; Shenzhen Science and Technology Program[HIT.OCEF.2022038] ; Fundamental Research Funds for the Central Universities[2019QN01C202] ; Talent Recruitment Project of Guangdong[2022M720942] ; China Postdoctoral Science Foundation[2208085ME113] ; Natural Science Foundation of Anhui Province ; Ministry of Science and Technology in Taiwan[110-2112-M-A49-002-MY3] ; MOST ; Max Planck-POSTECH-Hsinchu Center for Complex Phase Materials[51972160] ; National Natural Science Foundation of China[2022YFA1402903] ; National Key R&D Program of China[2021B1212040001] ; Guangdong Provincial Key Laboratory Program ; SUSTech Core Research Facilities |
| WOS研究方向 | Science & Technology - Other Topics ; Materials Science |
| 语种 | 英语 |
| WOS记录号 | WOS:001141216000001 |
| 出版者 | AMER CHEMICAL SOC |
| 资助机构 | Ministry of Science and Technology, Taiwan ; Guangdong Basic and Applied Basic Research Foundation ; Shenzhen Science and Technology Innovation project ; Shenzhen Science and Technology Program ; Fundamental Research Funds for the Central Universities ; Talent Recruitment Project of Guangdong ; China Postdoctoral Science Foundation ; Natural Science Foundation of Anhui Province ; Ministry of Science and Technology in Taiwan ; MOST ; Max Planck-POSTECH-Hsinchu Center for Complex Phase Materials ; National Natural Science Foundation of China ; National Key R&D Program of China ; Guangdong Provincial Key Laboratory Program ; SUSTech Core Research Facilities |
| 源URL |  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Kuo, Chang-Yang; Chen, Zuhuang |
| 作者单位 | 1.Harbin Inst Technol, Sch Mat Sci & Engn, Shenzhen 518055, Peoples R China 2.Univ Sci & Technol China, Anhui Lab Adv Photon Sci & Technol, Hefei 230026, Peoples R China 3.Univ Sci & Technol China, Hefei Natl Res Ctr Phys Sci Microscale, Hefei 230026, Peoples R China 4.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China 5.Songshan Lake Mat Lab, Dongguan 523808, Peoples R China 6.Natl Yang Ming Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan 7.Baylor Univ, Dept Phys, Waco, TX 76798 USA 8.Paul Scherrer Inst, CH-5232 Villigen, Switzerland 9.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 10.Harbin Inst Technol, Flexible Printed Elect Technol Ctr, Shenzhen 518055, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Hailin,Huang, Haoliang,Feng, Yanpeng,et al. Enhanced Exchange Bias in Epitaxial High-Entropy Oxide Heterostructures[J]. ACS APPLIED MATERIALS & INTERFACES,2023,15(50):58643-58650. |
| APA | Wang, Hailin.,Huang, Haoliang.,Feng, Yanpeng.,Ku, Yu-Chieh.,Liu, Cheng-En.,...&Chen, Zuhuang.(2023).Enhanced Exchange Bias in Epitaxial High-Entropy Oxide Heterostructures.ACS APPLIED MATERIALS & INTERFACES,15(50),58643-58650. |
| MLA | Wang, Hailin,et al."Enhanced Exchange Bias in Epitaxial High-Entropy Oxide Heterostructures".ACS APPLIED MATERIALS & INTERFACES 15.50(2023):58643-58650. |
入库方式： OAI收割
来源：金属研究所
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