Improved energy storage density in La-doped PbZr0.95Ti0.05O3 films with stress regulation
文献类型：期刊论文
| 作者 | Yang, Fei1,2; Shao, Denghui1,2; Liang, Taokai1,2; Hou, Mengzhe1,2; Zhang, Bihui1,2,3; Li, Yizhuo4; Hu, Weijin4; Li, Xiaofang1,2; Hu, Yanchun1,2; Zhang, Dawei1,2 |
| 刊名 | JOURNAL OF ALLOYS AND COMPOUNDS
 |
| 出版日期 | 2024-03-05 |
| 卷号 | 976页码:10 |
| 关键词 | Antiferroelectrics Breakdown strength Energy storage density Dielectric Leakage |
| ISSN号 | 0925-8388 |
| DOI | 10.1016/j.jallcom.2023.173352 |
| 通讯作者 | Zhang, Bihui(zhangbh@zju.edu.cn) ; Wang, Xianwei(xwwang2000@163.com) |
| 英文摘要 | The Pb1-1.5xLaxZr0.95Ti0.05O3 films with different La3+ contents were successfully prepared on the LaNiO3/SiO2/ Si substrates by sol -gel method. The effect of La3+ doping on the microstructure, electrical properties, and energy storage performance of the films are systematically investigated. It is found that the introducing of La3+ with a smaller tolerance factor could enhance the lattice distortion and compressive stresses, leading to smaller grain size, slimmer electric hysteresis loops, and lower phase transition field hysteresis. As a result, a relatively high energy storage density of 30.2 J/cm3 together with the energy storage efficiency of 62.2% has been achieved in Pb0.82La0.12Zr0.95Ti0.05 antiferroelectric thin films with the optimum doping content. This improvement is largely attributed to the enhanced breakdown field strength from 1442 kV/cm to 1564 kV/cm as a result of grain size reduction. Our results demonstrate the crucial role of decreased tolerance factor in stabilizing the antiferroelectric phase and enhancing the phase transition electric field, and provide an effective route to enhance the energy storage performance of antiferroelectric thin films. |
| 资助项目 | National Natural Science Foundation of China[61974147] ; Scientific Research Project in Henan Normal University[20210376] ; National University Student Innovation Program[202010476023] ; University Student Innovation Program in Henan Normal University[20200208] ; University Student Innovation Program in Henan Normal University[20200209] ; University Student Innovation Program in Henan Normal University[20200212] |
| WOS研究方向 | Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:001151688100001 |
| 出版者 | ELSEVIER SCIENCE SA |
| 资助机构 | National Natural Science Foundation of China ; Scientific Research Project in Henan Normal University ; National University Student Innovation Program ; University Student Innovation Program in Henan Normal University |
| 源URL |  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Zhang, Bihui; Wang, Xianwei |
| 作者单位 | 1.Henan Normal Univ, Sch Phys, Lab Funct Mat, Xinxiang 453007, Peoples R China 2.Henan Key Lab Photovolta Mat, Xinxiang 453007, Peoples R China 3.Chongqing Univ Technol, Coll Sci, Chongqing 400054, Peoples R China 4.Chinese Acad Sci, Inst Met Res IMR, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yang, Fei,Shao, Denghui,Liang, Taokai,et al. Improved energy storage density in La-doped PbZr0.95Ti0.05O3 films with stress regulation[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2024,976:10. |
| APA | Yang, Fei.,Shao, Denghui.,Liang, Taokai.,Hou, Mengzhe.,Zhang, Bihui.,...&Wang, Xianwei.(2024).Improved energy storage density in La-doped PbZr0.95Ti0.05O3 films with stress regulation.JOURNAL OF ALLOYS AND COMPOUNDS,976,10. |
| MLA | Yang, Fei,et al."Improved energy storage density in La-doped PbZr0.95Ti0.05O3 films with stress regulation".JOURNAL OF ALLOYS AND COMPOUNDS 976(2024):10. |
入库方式： OAI收割
来源：金属研究所
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