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Epitaxial Strain Enhanced Ferroelectric Polarization toward a Giant Tunneling Electroresistance

文献类型：期刊论文

作者Li, Xiaoqi1,2; Liu, Jiaqi1,2; Huang, Jianqi1; Huang, Biaohong1,2; Li, Lingli1,2; Li, Yizhuo1; Hu, Wentao1,2; Li, Changji1; Ali, Sajjad3; Yang, Teng1,2
刊名ACS NANO
出版日期2024-03-04
卷号18期号:11页码:7989-8001
关键词epitaxial strain BaTiO3 Sr3Al2O6 strain-sensitivecoefficient ferroelectric tunnel junction spontaneouspolarization tunneling electroresistance
ISSN号1936-0851
DOI10.1021/acsnano.3c10933
通讯作者Yang, Teng(yangteng@imr.ac.cn) ; Hu, Weijin(wjhu@imr.ac.cn)
英文摘要A substantial ferroelectric polarization is the key for designing high-performance ferroelectric nonvolatile memories. As a promising candidate system, the BaTiO3/La0.67Sr0.33MnO3 (BTO/LSMO) ferroelectric/ferromagnetic heterostructure has attracted a lot of attention thanks to the merits of high Curie temperature, large spin polarization, and low ferroelectric coercivity. Nevertheless, the BTO/LSMO heterostructure suffers from a moderate FE polarization, primarily due to the quick film-thickness-driven strain relaxation. In response to this challenge, we propose an approach for enhancing the FE properties of BTO films by using a Sr3Al2O6 (SAO) buffering layer to mitigate the interfacial strain relaxation. The continuously tunable strain allows us to illustrate the linear dependence of polarization on epitaxial strain with a large strain-sensitive coefficient of similar to 27 mu C/cm(2) per percent strain. This results in a giant polarization of similar to 80 mu C/cm(2) on the BTO/LSMO interface. Leveraging this large polarization, we achieved a giant tunneling electroresistance (TER) of similar to 10(5) in SAO-buffered Pt/BTO/LSMO ferroelectric tunnel junctions (FTJs). Our research uncovers the fundamental interplay between strain, polarization magnitude, and device performance, such as on/off ratio, thereby advancing the potential of FTJs for next-generation information storage applications.
资助项目Special Fund for Central Government Guiding the Local Development of Science and Technology[2022YFA1203903] ; National Key R&D Program of China[61974147] ; National Key R&D Program of China[52031014] ; National Natural Science Foundation of China (NSFC)[2023JH6/100100063] ; Special Fund for Central Government Guiding the Local Development of Science and Technology ; Prince Sultan University
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science
语种英语
WOS记录号WOS:001180344300001
出版者AMER CHEMICAL SOC
资助机构Special Fund for Central Government Guiding the Local Development of Science and Technology ; National Key R&D Program of China ; National Natural Science Foundation of China (NSFC) ; Special Fund for Central Government Guiding the Local Development of Science and Technology ; Prince Sultan University
源URL  
专题金属研究所_中国科学院金属研究所
通讯作者Yang, Teng; Hu, Weijin
作者单位1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China
3.Prince Sultan Univ, Coll Humanities & Sci, Energy Water & Environm Lab, Riyadh 11586, Saudi Arabia
4.Zhejiang Univ, ZJU Hangzhou Global Sci & Technol Innovat Ctr, Sch Micronano Elect, Hangzhou 311215, Peoples R China
5.Shanxi Univ, Inst Optoelect, State Key Lab Quantum Opt & Quantum Opt Devices, Taiyuan 030006, Peoples R China
6.Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Peoples R China
推荐引用方式
GB/T 7714		 Li, Xiaoqi,Liu, Jiaqi,Huang, Jianqi,et al. Epitaxial Strain Enhanced Ferroelectric Polarization toward a Giant Tunneling Electroresistance[J]. ACS NANO,2024,18(11):7989-8001.
APA Li, Xiaoqi.,Liu, Jiaqi.,Huang, Jianqi.,Huang, Biaohong.,Li, Lingli.,...&Zhang, Zhidong.(2024).Epitaxial Strain Enhanced Ferroelectric Polarization toward a Giant Tunneling Electroresistance.ACS NANO,18(11),7989-8001.
MLA Li, Xiaoqi,et al."Epitaxial Strain Enhanced Ferroelectric Polarization toward a Giant Tunneling Electroresistance".ACS NANO 18.11(2024):7989-8001.

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来源：金属研究所

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