Effect of bias potential and dimension on electrochemical migration of capacitors for implantable devices
文献类型：期刊论文
| 作者 | Du, Shiyao1,2; Li, Feng3; Grumsen, Flemming Bjerg3; Ambat, Rajan3; Tang, Ao1; Li, Ying1,4 |
| 刊名 | NPJ MATERIALS DEGRADATION
 |
| 出版日期 | 2024-03-04 |
| 卷号 | 8期号:1页码:9 |
| DOI | 10.1038/s41529-024-00440-2 |
| 通讯作者 | Ambat, Rajan(raam@dtu.dk) ; Tang, Ao(a.tang@imr.ac.cn) ; Li, Ying(liying@imr.ac.cn) |
| 英文摘要 | Dendrite formation induced by electrochemical migration (ECM) is a common reliability problem occurring on printed circuit boards (PCBs), which significantly threatens the long-term safe operations of current implantable electronic devices (IEDs). Although several factors (i.e., contaminations, humidity, temperature) are proved to be the parameters closely related to ECM susceptibility of capacitors on a PCB under climate environments, further targeted research under other environments still needs to be conducted as ECM is highly environmental-dependent. Herein, the effects of bias potential and pitch dimension on ECM sensitivity are systematically studied using various sizes of capacitors on a test PCB under a human implantation environment. The finite element method first proves that a DC voltage pattern could be regarded as an accelerated test compared to other waveforms. Subsequent chronoamperometry tests using the DC potential further indicate that dendrite formation is closely related to pitch dimension under low bias potential, while under high bias potential electric field is also the dominating factor of dendrite formation for capacitors on a PCB. Benefiting from the electrochemical impedance spectroscopy (EIS) technique, the capacitor reliability under different corrosion states is also evaluated in a detailed manner. This work offers great value both in electronic corrosion mechanisms and future rational design for reliable IEDs. |
| 资助项目 | China Scholarship Council |
| WOS研究方向 | Materials Science |
| 语种 | 英语 |
| WOS记录号 | WOS:001178107200001 |
| 出版者 | NATURE PORTFOLIO |
| 资助机构 | China Scholarship Council |
| 源URL |  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Ambat, Rajan; Tang, Ao; Li, Ying |
| 作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 3.Tech Univ Denmark, Dept Civil & Mech Engn, Sect Mat & Surface Engn, DK-2800 Lyngby, Denmark 4.Northeastern Univ, Shenyang Natl Lab Mat Sci, 3-11 Wenhua Rd, Shenyang 110819, Peoples R China |
| 推荐引用方式 GB/T 7714 | Du, Shiyao,Li, Feng,Grumsen, Flemming Bjerg,et al. Effect of bias potential and dimension on electrochemical migration of capacitors for implantable devices[J]. NPJ MATERIALS DEGRADATION,2024,8(1):9. |
| APA | Du, Shiyao,Li, Feng,Grumsen, Flemming Bjerg,Ambat, Rajan,Tang, Ao,&Li, Ying.(2024).Effect of bias potential and dimension on electrochemical migration of capacitors for implantable devices.NPJ MATERIALS DEGRADATION,8(1),9. |
| MLA | Du, Shiyao,et al."Effect of bias potential and dimension on electrochemical migration of capacitors for implantable devices".NPJ MATERIALS DEGRADATION 8.1(2024):9. |
入库方式： OAI收割
来源：金属研究所
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