Development of low-stress SiC coating on single crystal Si using low elastic modulus SiOC amorphous buffer layer
文献类型：期刊论文
| 作者 | Jing, Weichen1,2; Tariq, Naeem ul Haq3; Wang, Junchao1,4; Hou, Wenkang1,2; Xiong, Tianying2; Tang, Mingqiang2 |
| 刊名 | JOURNAL OF NON-CRYSTALLINE SOLIDS
 |
| 出版日期 | 2024-05-01 |
| 卷号 | 631页码:8 |
| 关键词 | SiC coating SiOC buffer layer MOCVD Residual stress Mechanical property |
| ISSN号 | 0022-3093 |
| DOI | 10.1016/j.jnoncrysol.2024.122908 |
| 通讯作者 | Tang, Mingqiang(mqtang@imr.ac.cn) |
| 英文摘要 | In this study, we successfully prepared low-stress SiC coatings on single-crystal Si substrates using the organometallic chemical vapor deposition (MOCVD) technique. For this purpose, the SiOC buffer layer (with low hardness and low elastic modulus) was initially deposited on the substrate and then the SiC coating was directly deposited on the buffer layer. A series of both, the buffer layer and the SiC coating, were separately deposited at various process conditions to pinpoint their optimized combination. Results revealed that the residual compressive stress value for the optimized SiC composite coating (containing low elastic modulus SiOC buffer layer) was 87.9% lower than that of the single SiC layer. The findings of this study are of great significance for the production and integration of the SiOC buffer layer and the SiC coating which not only improves the production efficiency but also reduces the production costs low-cost power devices. |
| 资助项目 | National Key Research and Devel- opment Project[2019YFB2005302] |
| WOS研究方向 | Materials Science |
| 语种 | 英语 |
| WOS记录号 | WOS:001203047200001 |
| 出版者 | ELSEVIER |
| 资助机构 | National Key Research and Devel- opment Project |
| 源URL |  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Tang, Mingqiang |
| 作者单位 | 1.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shi changxu Innovat Ctr Adv Mat, Shenyang 110016, Peoples R China 3.Pakistan Inst Engn & Appl Sci, Dept Met & Mat Engn, Islamabad 45650, Pakistan 4.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China |
| 推荐引用方式 GB/T 7714 | Jing, Weichen,Tariq, Naeem ul Haq,Wang, Junchao,et al. Development of low-stress SiC coating on single crystal Si using low elastic modulus SiOC amorphous buffer layer[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS,2024,631:8. |
| APA | Jing, Weichen,Tariq, Naeem ul Haq,Wang, Junchao,Hou, Wenkang,Xiong, Tianying,&Tang, Mingqiang.(2024).Development of low-stress SiC coating on single crystal Si using low elastic modulus SiOC amorphous buffer layer.JOURNAL OF NON-CRYSTALLINE SOLIDS,631,8. |
| MLA | Jing, Weichen,et al."Development of low-stress SiC coating on single crystal Si using low elastic modulus SiOC amorphous buffer layer".JOURNAL OF NON-CRYSTALLINE SOLIDS 631(2024):8. |
入库方式： OAI收割
来源：金属研究所
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