Thermal stability and diffusion barrier performance of amorphous Ni-P layer at Sn/Ni-P/Cu interface
文献类型：期刊论文
| 作者 | Yao, Jinye1; Shang, Min1; Chen, Xiangxu1; Xing, Jing1; Guo, Tianhao2; Wang, Yunpeng1; Ma, Haitao1; Gao, Zhaoqing3,4 |
| 刊名 | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
 |
| 出版日期 | 2024-05-01 |
| 卷号 | 35期号:13页码:15 |
| ISSN号 | 0957-4522 |
| DOI | 10.1007/s10854-024-12637-x |
| 通讯作者 | Ma, Haitao(htma@dlut.edu.cn) ; Gao, Zhaoqing(zqgao@imr.ac.cn) |
| 英文摘要 | As chip integration increases and micro-bump size reduces in 3D integrated circuits (ICs), issues with service reliability due to electromigration and thermomigration are becoming more prevalent. This paper investigates the thermal stability of an amorphous Ni-P layer at different heating treatment temperatures and the microstructure evolution of the Sn/Ni-P/Cu interface under different soldering conditions. The study indicates that the maximum temperature for maintaining an amorphous Ni-P barrier layer is below 250 degrees C. The amorphous layer of Ni-P acts as an effective inhibitor of Cu atom diffusion at the Sn/Ni-P/Cu interface during soldering. However, when exposed to soldering conditions exceeding 275 degrees C for 5 min or more, the amorphous layer of Ni-P, with a thickness of approximately 1.8 mu m, loses its ability to act as a barrier layer at the Sn/Ni-P/Cu interface. This occurs specifically under conditions of 300 degrees C and dwell times less than 5 min. Additionally, the consumption of the Ni-P barrier layer is mainly governed by grain boundary diffusion and bulk diffusion. The findings of this study could provide theoretical guidance for designing the structure of solder joints with barrier layers. |
| 资助项目 | Shenyang National Laboratory for Materials Science |
| WOS研究方向 | Engineering ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:001214947800008 |
| 出版者 | SPRINGER |
| 资助机构 | Shenyang National Laboratory for Materials Science |
| 源URL |  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Ma, Haitao; Gao, Zhaoqing |
| 作者单位 | 1.Dalian Univ Technol, Sch Mat Sci & Engn, Dalian 116000, Peoples R China 2.Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China 3.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 4.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yao, Jinye,Shang, Min,Chen, Xiangxu,et al. Thermal stability and diffusion barrier performance of amorphous Ni-P layer at Sn/Ni-P/Cu interface[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2024,35(13):15. |
| APA | Yao, Jinye.,Shang, Min.,Chen, Xiangxu.,Xing, Jing.,Guo, Tianhao.,...&Gao, Zhaoqing.(2024).Thermal stability and diffusion barrier performance of amorphous Ni-P layer at Sn/Ni-P/Cu interface.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,35(13),15. |
| MLA | Yao, Jinye,et al."Thermal stability and diffusion barrier performance of amorphous Ni-P layer at Sn/Ni-P/Cu interface".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 35.13(2024):15. |
入库方式： OAI收割
来源：金属研究所
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