Enhanced thermoelectric performance of Mg3Sb2-xBix thermoelectric thin films through carrier concentration modulation by Bi alloying
文献类型：期刊论文
| 作者 | Ran, Yijun1,2; Ma, Wenxue3,4; Yu, Hailong1,2; Li, Wenxia1,2; Zhou, Dayi1,2; Wang, Fei5; Gao, Ning3,4; Yu, Zhi1,2; Tai, Kaiping1,2,6,7 |
| 刊名 | JOURNAL OF ALLOYS AND COMPOUNDS
 |
| 出版日期 | 2024-05-25 |
| 卷号 | 985页码:10 |
| 关键词 | Mg3Sb2-xBix thin film Magnetron sputtering Carrier concentration Thermoelectric performance |
| ISSN号 | 0925-8388 |
| DOI | 10.1016/j.jallcom.2024.174028 |
| 通讯作者 | Yu, Zhi(zyu@imr.ac.cn) ; Tai, Kaiping(kptai@imr.ac.cn) |
| 英文摘要 | Mg3Sb2-based alloys exhibit promising characteristics as thermoelectric materials owing to their non-toxicity, low cost, abundance of earth constituent elements, and high thermoelectric performance. However, the thermoelectric performance of Mg3Sb2-based films remains challenging due to their inherently low carrier concentration. To address this challenge, this work focuses on elevating the carrier concentration of Mg3Sb2-xBix films via alloying Bi in Mg3Sb2. The results demonstrate that the incorporation of the Bi element successfully increases the carrier concentration of Mg3Sb2-xBix (x=0, 0.5, 1.5, and 2) films from 10(16) cm(-3) (x=0) to 10(20) cm(-3) (x=2). Furthermore, the introduction of Bi in Mg3Sb2-xBix films suppresses the phonon transport by enhancing boundary scattering of phonon, leading to a decrease in thermal conductivity. Ultimately, the synergistic optimization drives the peak ZT value to 0.27 for x=1.5 in Mg3Sb2-xBix at 525 K, which is more than seven times higher compared to the Mg3Sb2 thin film (ZT similar to 0.035 at 525 K). This work has improved the thermoelectric properties of Mg3Sb2-based films, making an essential contribution to the advancement of Mg3Sb2-based film materials in the field of Micro-thermoelectric devices |
| 资助项目 | technology plan project[2022-MS-011] ; Shenyang science and tech-nology plan project[23-407-3-23] ; Science Fund for Distinguished Young Scholars of Liaoning Province[2023JH6/100500004] |
| WOS研究方向 | Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:001224788000001 |
| 出版者 | ELSEVIER SCIENCE SA |
| 资助机构 | technology plan project ; Shenyang science and tech-nology plan project ; Science Fund for Distinguished Young Scholars of Liaoning Province |
| 源URL |  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Yu, Zhi; Tai, Kaiping |
| 作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 3.Shandong Univ, Inst Frontier & Interdisciplinary Sci, Qingdao 266237, Peoples R China 4.Shandong Univ, Key Lab Particle Phys & Particle Irradiat, MOE, Qingdao 266237, Peoples R China 5.Xian Res Inst High Tech, Xian 710025, Peoples R China 6.Liaoning Lengxin Semicond Technol Co Ltd, Shenyang 110016, Peoples R China 7.Liaoning Profess Technol Innovat Ctr Integrated Ci, Shenyang 110016, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ran, Yijun,Ma, Wenxue,Yu, Hailong,et al. Enhanced thermoelectric performance of Mg3Sb2-xBix thermoelectric thin films through carrier concentration modulation by Bi alloying[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2024,985:10. |
| APA | Ran, Yijun.,Ma, Wenxue.,Yu, Hailong.,Li, Wenxia.,Zhou, Dayi.,...&Tai, Kaiping.(2024).Enhanced thermoelectric performance of Mg3Sb2-xBix thermoelectric thin films through carrier concentration modulation by Bi alloying.JOURNAL OF ALLOYS AND COMPOUNDS,985,10. |
| MLA | Ran, Yijun,et al."Enhanced thermoelectric performance of Mg3Sb2-xBix thermoelectric thin films through carrier concentration modulation by Bi alloying".JOURNAL OF ALLOYS AND COMPOUNDS 985(2024):10. |
入库方式： OAI收割
来源：金属研究所
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