Microstructure and optical properties of β-Ga 2 O 3 thin films fabricated by pulsed laser deposition
文献类型：期刊论文
| 作者 | Wu, Yiwen1,2; Yan, Xuexi1,3; Jiang, Yixiao1,3; Yao, Tingting1,3; Chen, Chunlin1,3; Ye, Hengqiang4 |
| 刊名 | THIN SOLID FILMS
 |
| 出版日期 | 2024-05-15 |
| 卷号 | 796页码:7 |
| 关键词 | Gallium (iii) oxide Thin film Pulsed laser deposition Transmission electron microscopy Optical properties |
| ISSN号 | 0040-6090 |
| DOI | 10.1016/j.tsf.2024.140336 |
| 通讯作者 | Chen, Chunlin(clchen@imr.ac.cn) |
| 英文摘要 | beta- Ga 2 O 3 has attracted extensive attention in the fields of optoelectronics and high-power electric devices due to its excellent electrical properties and thermal stability. Growth of epitaxial beta- Ga 2 O 3 films with good crystallinity is challenging since it is difficult to effectively control the impurities in the films. Here, beta- Ga 2 O 3 thin films were epitaxially grown on MgO (100) substrates via pulsed laser deposition system. The microstructure and optical properties of the beta- Ga 2 O 3 thin films were systematically characterized by combining high-resolution X-ray diffraction, X-ray photoelectron spectroscopy, ultraviolet-visible spectrophotometer and advanced transmission electron microscopy. Effects of the growth temperature and O 2 partial pressure on the crystallinity, valance states of Ga ions and band gap of the beta- Ga 2 O 3 thin films were investigated. The light absorption wavelength of the beta- Ga 2 O 3 thin films ranges from 220 nm to 260 nm, which is close to the theoretical value. The epitaxial orientation between beta- Ga 2 O 3 film and MgO substrate is beta- Ga 2 O 3 (100) [021] // MgO (100) [010]. A thin layer of gamma- Ga 2 O 3 exists in the interfacial region. |
| 资助项目 | National Natural Sci- ence Foundation of China[52125101] ; National Natural Sci- ence Foundation of China[51971224] ; National Natural Sci- ence Foundation of China[52001309] ; National Natural Sci- ence Foundation of China[X210141TL210] ; Basic and Applied Basic Research Major Programme of Guangdong Province, China[2021B0301030003] |
| WOS研究方向 | Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:001232072100001 |
| 出版者 | ELSEVIER SCIENCE SA |
| 资助机构 | National Natural Sci- ence Foundation of China ; Basic and Applied Basic Research Major Programme of Guangdong Province, China |
| 源URL |  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Chen, Chunlin |
| 作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Nano Sci & Technol Inst, Suzhou 215123, Peoples R China 3.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 4.Ji Hua Lab, Foshan 528200, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wu, Yiwen,Yan, Xuexi,Jiang, Yixiao,et al. Microstructure and optical properties of β-Ga 2 O 3 thin films fabricated by pulsed laser deposition[J]. THIN SOLID FILMS,2024,796:7. |
| APA | Wu, Yiwen,Yan, Xuexi,Jiang, Yixiao,Yao, Tingting,Chen, Chunlin,&Ye, Hengqiang.(2024).Microstructure and optical properties of β-Ga 2 O 3 thin films fabricated by pulsed laser deposition.THIN SOLID FILMS,796,7. |
| MLA | Wu, Yiwen,et al."Microstructure and optical properties of β-Ga 2 O 3 thin films fabricated by pulsed laser deposition".THIN SOLID FILMS 796(2024):7. |
入库方式： OAI收割
来源：金属研究所
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