Atomic and electronic structures of domain boundaries in LaTiO3 thin films
文献类型：期刊论文
| 作者 | Qiao, Beibei1,2; Sun, Ziyi1; Jiang, Yixiao1,2; Yao, Tingting1,2; Jin, Qianqian3; He, Neng1; Tao, Ang1; Yan, Xuexi1; Yang, Zhiqing2; Chen, Chunlin1,2 |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2024-06-07 |
| 卷号 | 135期号:21页码:9 |
| ISSN号 | 0021-8979 |
| DOI | 10.1063/5.0207483 |
| 通讯作者 | Yao, Tingting(ttyao11s@imr.ac.cn) ; Chen, Chunlin(clchen@imr.ac.cn) |
| 英文摘要 | Domain boundaries in perovskite oxides often exhibit abundant physical properties and phenomena. Here, epitaxial LaTiO3 thin films on (100) SrTiO3 substrates are prepared by pulsed-laser deposition. X-ray diffraction and transmission electron microscopy investigations reveal that the epitaxial LaTiO(3 )thin films have good crystallinity but a high density of domain boundaries. Atomic-scale scanning transmission electron microscopy observations reveal that two types of domain boundaries are formed in the LaTiO3 thin films. The type I domain boundaries are formed on the {100} crystal planes, while the type II domain boundaries on the {110} crystal planes. Electron energy-loss spectroscopy analyses suggest that the valence states of Ti ions at the type I domain boundaries are +3, while those at the type II domain boundaries are +4. First-principles calculations reveal that the bandgap decreases at both domain boundaries compared to the bulk. The carrier concentration at the type I domain boundaries is significantly higher than that of the bulk, while the carrier concentration at the type II domain boundaries is lower. These findings suggest that domain boundaries play an important role in tailoring the electrical properties of the LaTiO3 thin films, thereby promoting the potential applications and property modulation of related materials and devices. |
| 资助项目 | National Natural Science Foundation of China10.13039/501100001809[52125101] ; National Natural Science Foundation of China10.13039/501100001809[52271015] ; National Natural Science Foundation of China[X210141TL210] ; Ji Hua Laboratory Project[2021B0301030003] ; Basic and Applied Basic Research Major Programme of Guangdong Province, China |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:001238466700004 |
| 出版者 | AIP Publishing |
| 资助机构 | National Natural Science Foundation of China10.13039/501100001809 ; National Natural Science Foundation of China ; Ji Hua Laboratory Project ; Basic and Applied Basic Research Major Programme of Guangdong Province, China |
| 源URL |  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Yao, Tingting; Chen, Chunlin |
| 作者单位 | 1.Chinese Acad Sci, Univ Sci & Technol China, Inst Met Res, Sch Mat Sci & Engn,Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Ji Hua Lab, Foshan 528200, Peoples R China 3.Guangxi Univ Sci & Technol, Sch Microelect & Mat Engn, Liuzhou 545006, Peoples R China 4.Songshan Lake Mat Lab, Bay Area Ctr Electron Microscopy, Dongguan 523808, Peoples R China 5.Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China |
| 推荐引用方式 GB/T 7714 | Qiao, Beibei,Sun, Ziyi,Jiang, Yixiao,et al. Atomic and electronic structures of domain boundaries in LaTiO3 thin films[J]. JOURNAL OF APPLIED PHYSICS,2024,135(21):9. |
| APA | Qiao, Beibei.,Sun, Ziyi.,Jiang, Yixiao.,Yao, Tingting.,Jin, Qianqian.,...&Ye, Hengqiang.(2024).Atomic and electronic structures of domain boundaries in LaTiO3 thin films.JOURNAL OF APPLIED PHYSICS,135(21),9. |
| MLA | Qiao, Beibei,et al."Atomic and electronic structures of domain boundaries in LaTiO3 thin films".JOURNAL OF APPLIED PHYSICS 135.21(2024):9. |
入库方式： OAI收割
来源：金属研究所
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