Electrically tunable Γ -Q interlayer excitons in twisted MoSe2 bilayers
文献类型：期刊论文
| 作者 | Huang, Jinqiang1,2; Xiong, Zhiren3,4; He, Jinkun3,4; Wu, Xingguang3,4; Watanabe, Kenji5; Taniguchi, Takashi6; Lai, Shen7; Zhang, Tongyao3,4,8; Han, Zheng Vitto3,4,8,9; Zhao, Siwen8 |
| 刊名 | JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
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| 出版日期 | 2025-02-01 |
| 卷号 | 207页码:70-75 |
| 关键词 | Interlayer excitons Intralayer excitons Twisted bilayer TMDs Momentum indirect excitons |
| ISSN号 | 1005-0302 |
| DOI | 10.1016/j.jmst.2024.04.029 |
| 通讯作者 | Zhang, Tongyao(tongyao_zhang@sxu.edu.cn) ; Han, Zheng Vitto(vitto.han@gmail.com) ; Zhao, Siwen(siwenzhao0126@gmail.com) |
| 英文摘要 | Twist, the very degree of freedom in van der Waals heterostructures, offers a compelling avenue to manipulate and tailor their electrical and optical characteristics. In particular, moir & eacute; patterns in twisted homobilayer transition metal dichalcogenides (TMDs) lead to zone folding and miniband formation in the resulting electronic bands, holding the promise to exhibit inter-layer excitonic optical phenomena. Although some experiments have shown the existence of twist-angle-dependent intra- and inter-layer excitons in twisted MoSe2 homobilayers, electrical control of the interlayer excitons in MoSe2 is relatively under-explored. Here, we show the signatures of the moir & eacute; effect on intralayer and interlayer excitons in 2H-stacked twisted MoSe2 homobilayers. Doping- and electric field-dependent photoluminescence measurements at low temperatures give evidence of the momentum-direct K-K intralayer excitons, and the momentum-indirect r-K and r-Q interlayer excitons. Our results suggest that twisted MoSe2 homobilayers are an intriguing platform for engineering interlayer exciton states, which may shed light on future atomically thin optoelectronic applications. (c) 2024 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology. |
| 资助项目 | National Key R&D Program of China[2023YFF1500600] ; National Natural Science Foundation of China[12004259] ; National Natural Science Foundation of China[12204287] ; China Postdoctoral Science Foundation[2022M723215] ; Fund for Shanxi 1331 Project Key Subjects Construction ; Innovation Program for Quantum Science and Technology[2021ZD0302003] ; JSPS KAKENHI[20H00354] ; JSPS KAKENHI[23H02052] ; World Premier International Research Center Initiative (WPI), MEXT, Japan |
| WOS研究方向 | Materials Science ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:001245321600001 |
| 出版者 | JOURNAL MATER SCI TECHNOL |
| 资助机构 | National Key R&D Program of China ; National Natural Science Foundation of China ; China Postdoctoral Science Foundation ; Fund for Shanxi 1331 Project Key Subjects Construction ; Innovation Program for Quantum Science and Technology ; JSPS KAKENHI ; World Premier International Research Center Initiative (WPI), MEXT, Japan |
| 源URL |  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Zhang, Tongyao; Han, Zheng Vitto; Zhao, Siwen |
| 作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 3.Shanxi Univ, Inst Optoelect, State Key Lab Quantum Opt & Quantum Opt Devices, Taiyuan 030006, Peoples R China 4.Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Peoples R China 5.Natl Inst Mat Sci, Res Ctr Elect & Opt Mat, 1-1 Namiki, Tsukuba 3050044, Japan 6.Natl Inst Mat Sci, Res Ctr Mat Nanoarchitecton, 1-1 Namiki, Tsukuba 3050044, Japan 7.Univ Macau, Inst Appl Phys & Mat Engn, Ave Univ, Taipa 999078, Macau, Peoples R China 8.Liaoning Acad Mat, Shenyang, Peoples R China 9.Hefei Natl Lab, Hefei 230088, Peoples R China |
| 推荐引用方式 GB/T 7714 | Huang, Jinqiang,Xiong, Zhiren,He, Jinkun,et al. Electrically tunable Γ -Q interlayer excitons in twisted MoSe2 bilayers[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2025,207:70-75. |
| APA | Huang, Jinqiang.,Xiong, Zhiren.,He, Jinkun.,Wu, Xingguang.,Watanabe, Kenji.,...&Zhao, Siwen.(2025).Electrically tunable Γ -Q interlayer excitons in twisted MoSe2 bilayers.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,207,70-75. |
| MLA | Huang, Jinqiang,et al."Electrically tunable Γ -Q interlayer excitons in twisted MoSe2 bilayers".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 207(2025):70-75. |
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来源：金属研究所
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