Identifying atomically thin isolated-band channels for intrinsic steep-slope transistors by high-throughput study
文献类型：期刊论文
| 作者 | Qu, Hengze1; Zhang, Shengli1; Cao, Jiang2; Wu, Zhenhua3; Chai, Yang4; Li, Weisheng5; Li, Lain-Jong6; Ren, Wencai7; Wang, Xinran5,8,9; Zeng, Haibo1 |
| 刊名 | SCIENCE BULLETIN
 |
| 出版日期 | 2024-05-30 |
| 卷号 | 69期号:10页码:1427-1436 |
| 关键词 | 2D materials Electronic band structures Transport properties Steep-slope transistors DFT-NEGF calculations |
| ISSN号 | 2095-9273 |
| DOI | 10.1016/j.scib.2024.03.017 |
| 通讯作者 | Zhang, Shengli(zhangslvip@njust.edu.cn) ; Zeng, Haibo(zeng.haibo@njust.edu.cn) |
| 英文摘要 | Developing low-power FETs holds significant importance in advancing logic circuits, especially as the feature size of MOSFETs approaches sub-10 nanometers. However, this has been restricted by the thermionic limitation of SS , which is limited to 60 mV per decade at room temperature. Herein, we proposed a strategy that utilizes 2D semiconductors with an isolated-band feature as channels to realize subthermionic SS in MOSFETs. Through high-throughput calculations, we established a guiding principle that combines the atomic structure and orbital interaction to identify their sub-thermionic transport potential. This guides us to screen 192 candidates from the 2D material database comprising 1608 systems. Additionally, the physical relationship between the sub-thermionic transport performances and electronic structures is further revealed, which enables us to predict 15 systems with promising device performances for low-power applications with supply voltage below 0.5 V. This work opens a new way for the low-power electronics based on 2D materials and would inspire extensive interests in the experimental exploration of intrinsic steep-slope MOSFETs. (c) 2024 Science China Press. Published by Elsevier B.V. and Science China Press. All rights reserved. |
| 资助项目 | Postgraduate Research & Practice Innovation Program of Jiangsu Province[KYCX22_0428] ; Training Program of the Major Research Plan of the National Natural Science Foundation of China[91964103] ; Natural Science Foundation of Jiangsu Province[BK20180071] ; Fundamental Research Funds for the Central Universities[30919011109] ; Qing Lan Project of Jiangsu Province ; Six Talent Peaks Project of Jiangsu Province[XCL-035] ; Research Grant Council of Hong Kong[CRS_PolyU502/22] |
| WOS研究方向 | Science & Technology - Other Topics |
| 语种 | 英语 |
| WOS记录号 | WOS:001245868100001 |
| 出版者 | ELSEVIER |
| 资助机构 | Postgraduate Research & Practice Innovation Program of Jiangsu Province ; Training Program of the Major Research Plan of the National Natural Science Foundation of China ; Natural Science Foundation of Jiangsu Province ; Fundamental Research Funds for the Central Universities ; Qing Lan Project of Jiangsu Province ; Six Talent Peaks Project of Jiangsu Province ; Research Grant Council of Hong Kong |
| 源URL |  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Zhang, Shengli; Zeng, Haibo |
| 作者单位 | 1.Nanjing Univ Sci & Technol, Coll Mat Sci & Engn, MIIT Key Lab Adv Display Mat & Devices, Nanjing 210094, Peoples R China 2.Nanjing Univ Sci & Technol, Sch Elect & Opt Engn, Nanjing 210094, Peoples R China 3.Chinese Acad Sci, Key Lab Microelect Device & Integrated Technol, Inst Microelect, Beijing 100029, Peoples R China 4.Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong 999077, Peoples R China 5.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Sch Elect Sci & Engn, Natl Lab Solid State Microstruct, Nanjing 210023, Peoples R China 6.Univ Hong Kong, Dept Mech Engn, Hong Kong 999077, Peoples R China 7.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 8.Nanjing Univ, Sch Integrated Circuits, Suzhou 215163, Peoples R China 9.Suzhou Lab, Suzhou 215009, Peoples R China |
| 推荐引用方式 GB/T 7714 | Qu, Hengze,Zhang, Shengli,Cao, Jiang,et al. Identifying atomically thin isolated-band channels for intrinsic steep-slope transistors by high-throughput study[J]. SCIENCE BULLETIN,2024,69(10):1427-1436. |
| APA | Qu, Hengze.,Zhang, Shengli.,Cao, Jiang.,Wu, Zhenhua.,Chai, Yang.,...&Zeng, Haibo.(2024).Identifying atomically thin isolated-band channels for intrinsic steep-slope transistors by high-throughput study.SCIENCE BULLETIN,69(10),1427-1436. |
| MLA | Qu, Hengze,et al."Identifying atomically thin isolated-band channels for intrinsic steep-slope transistors by high-throughput study".SCIENCE BULLETIN 69.10(2024):1427-1436. |
入库方式： OAI收割
来源：金属研究所
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