A Resonance-Sensitive Ultralow-Frequency Raman Mode in Twisted Bilayer Graphene
文献类型：期刊论文
| 作者 | Yan, Shuowen1; Huang, Jianqi2,3,4; Hao, He1; Song, Ge1; Wang, Yuechen1,5,6; Peng, Hailin1,5,6; Yang, Teng2,3,4; Zhang, Jin1; Tong, Lianming1 |
| 刊名 | NANO LETTERS
 |
| 出版日期 | 2024-06-20 |
| 卷号 | 24期号:26页码:7879-7885 |
| 关键词 | twisted bilayer graphene (tBLG) van Hove singularity(vHS) resonance Raman scattering anti-Stokes Ramanscattering |
| ISSN号 | 1530-6984 |
| DOI | 10.1021/acs.nanolett.4c01018 |
| 通讯作者 | Tong, Lianming(tonglm@pku.edu.cn) |
| 英文摘要 | Twisted bilayer graphene (tBLG) possesses intriguing physical properties including unconventional superconductivity, enhanced light-matter interaction due to the formation of van Hove singularities (vHS), and a divergence of density of states in the electronic band structures. The vHS energy band gap provides optical resonant transition channels that can be tuned by the twist angle and interlayer coupling. Raman spectroscopy provides rich information on the vHS structure of tBLG. Here, we report the discovery of an ultralow-frequency Raman mode at similar to 49 cm(-1) in tBLG. This mode is assigned to the combination of ZA (an out-of-plane acoustic phonon) and TA (a transverse acoustic phonon) phonons, and the Raman scattering is proposed to occur at the so-called mini-valley. This mode is found to be particularly sensitive to the change in vHS in tBLG. Our findings may deepen the understanding of Raman scattering in tBLG and help to reveal vHS-related electron-phonon interactions in tBLG. |
| 资助项目 | National Natural Science Foundation of China[2022YFA1203302] ; National Natural Science Foundation of China[2022YFA1203304] ; National Natural Science Foundation of China[2018YFA0703502] ; National Key R&D Program of China[52303291] ; National Key R&D Program of China[52021006] ; National Key R&D Program of China[21974004] ; National Natural Science Foundation of China[XDB36030100] ; Strategic Priority Research Program of CAS[BNLMS-CXTD-202001] ; Beijing National Laboratory for Molecular Sciences[KQTD20221101115627004] ; Shenzhen Science and Technology Innovation Commission |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:001252054400001 |
| 出版者 | AMER CHEMICAL SOC |
| 资助机构 | National Natural Science Foundation of China ; National Key R&D Program of China ; National Natural Science Foundation of China ; Strategic Priority Research Program of CAS ; Beijing National Laboratory for Molecular Sciences ; Shenzhen Science and Technology Innovation Commission |
| 源URL |  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Tong, Lianming |
| 作者单位 | 1.Peking Univ, Beijing Sci & Engn Ctr Nanocarbons, Beijing Natl Lab Mol Sci, Ctr Nanochem,Coll Chem & Mol Engn, Beijing 100871, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 3.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 4.Liaoning Acad Mat, Shenyang 110167, Peoples R China 5.Beijing Graphene Inst, Beijing 100095, Peoples R China 6.Peking Univ, Acad Adv Interdisciplinary Studies, Beijing 100871, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yan, Shuowen,Huang, Jianqi,Hao, He,et al. A Resonance-Sensitive Ultralow-Frequency Raman Mode in Twisted Bilayer Graphene[J]. NANO LETTERS,2024,24(26):7879-7885. |
| APA | Yan, Shuowen.,Huang, Jianqi.,Hao, He.,Song, Ge.,Wang, Yuechen.,...&Tong, Lianming.(2024).A Resonance-Sensitive Ultralow-Frequency Raman Mode in Twisted Bilayer Graphene.NANO LETTERS,24(26),7879-7885. |
| MLA | Yan, Shuowen,et al."A Resonance-Sensitive Ultralow-Frequency Raman Mode in Twisted Bilayer Graphene".NANO LETTERS 24.26(2024):7879-7885. |
入库方式： OAI收割
来源：金属研究所
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